Fairchild Semiconductor FDC6308P Datasheet
FDC6308P
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6308P
July 1999
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Features
-1.7 A, -18 V. R
R
Extended V
= 0.18 Ω @ V
DS(ON)
= 0.30 Ω @ V
DS(ON)
range (±12V) for battery applications.
GSS
Low gate charge (3nC typical).
Fast switching speed.
= -4.5 V
GS
= -2.5 V
GS
High performance trench technology for extremely
Applications
Load switch
Battery protection
low R
SuperSOT
than standard SO-8); low profile (1mm thick).
.
DS(ON)
TM
-6 package: small footprint (72% smaller
Power management
D2
S1
4
3
D1
5
2
G2
SuperSO T -6
TM
Absolute Maximum Ratings T
G1
S2
= 25°C unless otherwise noted
A
6
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) -1.7 A
- Pulsed -5
Power Dissipation for Single Operation (Note 1a) 0.96 W
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +150
±12
0.9
0.7
V
°C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 130
Thermal Resistance, Junction-to-Case (Note 1) 60
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.308
1999 Fairchild Semiconductor Corporation
FDC6308P 7’’ 8mm 3000 units
°C/W
°C/W
FDC6308P Rev. C
FDC6308P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characterist ic s
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = -250 µA
V
GS
= -250 µA, Referenced to 25°C
I
D
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V -100 nA
-20 V
-15
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = -250 µA
V
DS
= -250 µA, Referenced to 25°C
I
D
VGS = -4.5 V, ID = -1.7 A
V
= -4.5 V, ID = -1.7 A @125°C
GS
V
= -2.5 V, ID = -1.4 A
GS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -2.5 A
Forward Transconductance VDS = -5 V, ID = -1.7 A 4 S
-0.6 -1.1 -1.5 V
2.7
0.143
0.22
0.25
mV/°C
0.18
0.28
0.30
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 265 pF
Output Capacitance 80 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V
DS
f = 1.0 MHz
45 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 6 12 ns
Turn-On Rise Time 9 18 ns
= -10 V, ID = -1 A
V
DD
V
= -4.5 V, R
GS
GEN
= 6 Ω
Turn-Off Delay Time 14 25 ns
Turn-Off Fall Time
Total Gate Charge 3 5 nC
Gate-Source Charge 0.7 nC
V
= -10 V, ID = -1.7 A
DS
= -4.5 V
V
GS
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
of the drain pins. R
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -1.2 V
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
is guaranteed by design while R
θJC
a) 130 °C/W when
mounted on a 0.125 in
pad of 2 oz. copper.
is determined by the user's board design. Both devices are assumed to be operating and
θCA
2
b) 140 °C/W when
mounted on a 0.005 in
pad of 2 oz. copper.
2
c) 180 °C/W when
39ns
0.8 nC
mounted on a minimum pad.
FDC6308P Rev. C
Typical Characteristics
FDC6308P
10
8
6
4
2
, DRAIN-SOURCE CURRENT (A)
D
-I
0
012345
VGS = -4.5V
-4.0V
-3.5V
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
-3.0v
-2.5V
-2.0V
2.2
2
1.8
VGS = -2.5V
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-R E SI ST AN CE
-3.0V
-3.5V
-4.0V
0.8
0246810
- I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.5
ID = -1.7A
1.4
= -4.5V
V
GS
1.3
1.2
1.1
1
, NORMALIZED
0.9
DS(ON)
R
0.8
0.7
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.5
0.4
0.3
0.2
, ON-RESISTANCE (OHM)
0.1
DS(ON)
R
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
-4.5V
ID = -0.9A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
0.51.52.53.54.55.5
-V
TA = -55oC
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS=0
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
00.20.40.60.811.21.41.6
TJ=125oC
25oC
-55oC
-V
, BODY DIODE VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6308P Rev. C
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