Fairchild Semiconductor FDC604P Datasheet

FDC604P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDC604P

June 2000

PRELIMINARY

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –5.5 A, –20 V. R

R

R

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

= 0.033 Ω @ VGS = –4.5 V

DS(ON)

= 0.043 Ω @ VGS = –2.5 V

DS(ON)

= 0.060 Ω @ VGS = –1.8 V

DS(ON)

S

D

D

1

2

6

5

G

SuperSOT -6

TM

D

D

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage –20 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) -5.5 A

– Pulsed -20

Maximum Power Dissipation (Note 1a) 1.6 WP

(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

±8

0.8

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

Thermal Resistance, Junction-to-Case (Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.604 FDC604P 7’’ 8mm 3000 units

2000 Fairchild Semiconductor Corporati on

°C/W

°C/W

FDC604P Rev B (W)

FDC604P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS
===∆T
I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

–20 V

–12

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
===∆T
R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5 V, ID = –5.5 A

= –2.5 V, ID = –4.8 A

V

GS

= –1.8 V, ID = –4.0 A

V

GS

–0.4 –0.7 –1.5 V

3

0.024

0.030

0.042

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A

Forward Transconductance VDS = –5 V, ID = –3.5 A 23 S

mV/°C

0.033

0.043

0.060

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1926 pF

Output Capacitance 530 pF

Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

185 pF

Switching Characteristics (Note 2)

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 13 23 ns

Turn–On Rise Time 11 20 ns

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 90 144 ns

Turn–Off Fall Time

Total Gate Charge 19 30 nC

Gate–Source Charge 4 nC

V

= –10 V, ID = –3.5 A,

DS

= –4.5 V

V

GS

Gate–Drain Charge

45 72 ns

7.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

pins. R

a. 78°C/W when mounted on a 1in

b. 156°C/W when mounted on a minimum pad.

2. Pulse Te st: Puls e Width ≤=300 µs, Duty Cycle ≤=2.0%

Maximum Continuous Drain–Source Diode Forward Current –1.3 A

Drain–Source Diode Forward

VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

is guaranteed by design while R

θJC

2

pad of 2oz copper on FR-4 board.

is determined by the user's board design.

θCA

µA

Ω

FDC604P Rev B(W)

Typical Characteristics

)

FDC604P

20

VGS = -4.5V

-2.5V

15

10

5

0

0123

-2.0V

-1.8V

, DRAIN-SOUR CE VOLTAGE (V)

-V

DS

-1.5V

3

VGS = -1.5V

2.5

2

1.5

1

0.5

0 5 10 15 20

-1.8V

-2.0V

-I

, DRAIN CURRENT (A)

D

-2.5V

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5

ID = -5.5A

1.4
V

= -4.5V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATUR E (oC)

T

J

0.12

0.09

0.06

0.03
TA = 25oC

0

12345

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

ID = -2.8 A

Figure 3. On-Resistance Variation

withTemperature.

20

VDS = -5V

15

10

5

0

00.511.522.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

o

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1. 2

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FOR WARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC604P Rev B(W)