Fairchild Semiconductor FDC5614P Datasheet
FDC5614P
60V P-Channel Logic Level PowerTrench
MOSFET
FDC5614P
February 2002
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –3 A, –60 V. R
R
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
= 0.105 Ω @ VGS = –10 V
DS(ON)
= 0.135 Ω @ VGS = –4.5 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage –60 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –3 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
(Note 1b)
±20
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.564 FDC5614P 7’’ 8mm 3000 units
2002 Fairchild Sem iconductor Corporation
°C/W
°C/W
FDC5614P Rev C1 (W )
FDC5614P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
V
= 0 V, ID = –250 µA
GS
I
= –250 µA, Referenced to
D
25°C
–60 V
–49
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
V
= VGS, ID = –250 µA
DS
= –250 µA,Referenced to 25°C
I
D
VGS = –10 V, ID = –3 A
V
= –4.5 V, ID = –2.7 A
GS
= –10 V, ID = –3 A TJ=125°C
V
GS
–1 –1.6 –3 V
4
82
105
130
105
135
190
mV/°C
mΩ
gFS Forward Transconductance VDS = –5 V, ID = –3 A 8 S
Dynamic Characteristics
C
Input Capacitance 759 pF
iss
C
Output Capacitance 90 pF
oss
C
Reverse Transfer Capacitance
rss
= –30 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
39 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 10 20 ns
t
Turn–Off Delay Time 19 34 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 15 24 nC
Qgs Gate–Source Charge 2.5 nC
Qgd Gate–Drain Charge
= –30 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –30V, ID = –3.0 A,
V
DS
V
= –10 V
GS
GEN
= 6 Ω
12 22 ns
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
θJA
pins. R
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycl e ≤ 2.0%
is guaranteed by design while R
θJC
2
pad of 2oz copper on FR-4 board.
is determined by the user's board design.
θCA
VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.2 V
FDC5614P Rev C1 (W )
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