Fairchild Semiconductor FDC2612 Datasheet
February 2002
FDC2612
200V N-Channel PowerTrench
MOSFET
FDC2612
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
Features
• 1.1 A, 200 V. R
• High performance trench technology for extremely
low R
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)
DS(ON)
= 725 mΩ @ VGS = 10 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 200 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 1.1 A
– Pulsed 4
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range
STG
(Note 1b)
± 20
0.8
−55 to +150 °C
V
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.262 FDC2612 7’’ 8mm 3000 units
2002 Fairchild Sem iconductor Corporation
°C/W
°C/W
FDC2612 Rev B3 (W )
FDC2612
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V , VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
200 V
246
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current VGS = 10 V, VDS = 10 V 4 A
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
V
= 10 V, ID = 1.1 A
GS
= 10 V, ID = 1.1 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 1.1 A 4.4 S
2 4 4.5 V
–8.7
605
1133
1430
725
mV/°C
mΩ
Dynamic Characteristics
V
C
Input Capacitance 234 pF
iss
C
Output Capacitance 18 pF
oss
C
Reverse Transfer Capacitance
rss
= 100 V, V
DS
f = 1.0 MHz
= 0 V,
GS
8 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 6 12 ns
t
Turn–Off Delay Time 17 30 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 8 11 nC
Qgs Gate–Source Charge 1.6 nC
Qgd Gate–Drain Charge
= 100 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
V
= 100 V, ID = 1.1 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
8 16 ns
2.2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD
t
rr
Qrr Diode Reverse Recovery Charge
Notes:
1.R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 74.5 nS
is guaranteed by design while R
θJC
θCA
a) 78°C/W when
mounted on a 1in
of 2 oz copper
V
= 0 V, IS = 1.3 A(Note 2) 0.8 1.2 V
GS
= 1.1A,
I
F
= 300 A/µs (Note 2)
d
iF/dt
is determined by the user's board design.
2
pad
194 nC
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
FDC2612 Rev B3(W )
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