Fairchild Semiconductor FDP2572, FDB2572 Datasheet

FDB2572 / FDP2572

N-Channel PowerTrench® MOSFET
150V, 29A, 54mΩ

FDB25 72 / FDP2572

September 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82860

= 45mΩ (Typ.), V

DS(ON)

(tot) = 26nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 9A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Pow er Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Lo ad Control

• Electronic Valve T rain System s

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

GATE

SOURCE

TO-263AB

FDB SERIES

= 25°C unless otherwise noted

C

(FLANGE)

G

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 20 A

C

= 25oC, VGS = 10V, R

amb

= 43oC/W) 4 A

θJA

29 A

Pulsed Figure 4 A

E

AS

P

D

T

, T

J

STG

Single Pulse Avalanche Energy (Note 1) 36 mJ
Power dissipation 135 W

o

Derate above 25

C0.9W/

Operating and Storage Temperature -55 t o 175

D

S

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220,TO-263 1.11
Thermal Resistance Junction t o Ambient TO-220, TO-263 (Note 2) 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB2572 / FDP2572 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB2572 FDB2572 TO-263AB 330mm 24mm 800 units
FDP2572 FDP2572 TO-220AB Tube N/A 50 units

FDB25 72 / FDP2572

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

--250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

=9A, VGS=10V - 0.045 0.054

I

Drain to Source On Resistance

D

= 4A, VGS = 6V, - 0.050 0.075

D

=9A, VGS=10V, TC=175oC - 0.126 0.146

I

D

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 183 - pF
Reverse Transfer Capacitance - 40 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 3.3 4.3 nC
Gate to Source Gate Charge - 8 - nC
Gate Charge Threshold to Plateau - 5 - nC

V

DD

I

= 9A

D

I

= 1.0m A

g

= 75V

Gate to Drain “Miller” Charge - 6 - nC

-1770- pF

-2634nC

µA

ΩI

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 14 - ns
T u rn-Off Delay Time - 31 - ns
Fall Time - 14 - ns
Turn-Off Time - - 66 ns

(VGS = 10V)

V

DD

V

GS

--36ns

= 75V, ID = 9A
= 10V, RGS = 11.0Ω

Drain-Source Diode Characteristics

I

= 9A - - 1 .25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2002 Fairchild Semiconductor Corporation FDB2572 / FDP2572 Rev. B

Source to Drain Di ode Voltage
Reverse Recovery Time ISD = 9A, dISD/dt =100A/µs- -74ns

Reverse Recovered Charge ISD = 9A, dISD/dt =100A/µs - - 169 nC

= 25°C, L = 0.2mH, IAS = 19A.

J

SD

I

= 4A - - 1.0 V

SD

FDB25 72 / FDP2572

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2.0

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

-5

10

-4

10

SINGLE PULSE

, NORMALIZED
Z

1.0

0.1

θJC

THERMAL IMPEDANCE

0.01

40

V

= 10V

GS

35

30

25

20

15

, DRAIN CURRENT (A)

10

D

I

5

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

x R

0

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

500

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100

, PEAK CURRENT (A)

DM

I

VGS = 10V

20

-5

10

-4

10

-3

10

t, PULSE WIDT H (s)

-2

10

-1

10

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDB2572 / FDP2572 Rev. B

FDB25 72 / FDP2572

Typical Characteristics T

1000

100

10

OPERATION IN THIS

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

SINGLE PULSE
TJ = MAX R ATED

T

= 25oC

C

0.1
1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs
100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

60

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

DD

= 15V

TJ = 175oC

50

40

30

100

STARTING TJ = 25oC

10

STARTING TJ = 150oC

1

If R = 0

, AVALANCHE CURRENT (A)

200

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

0.1

0.001 0.01 0.1 1
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

60

TC = 25oC

50

40

30

VGS = 10V

VGS = 6V

- VDD) +1]

VGS = 7V

20

, DRAIN CURRENT (A)

D

I

10

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

60

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

55

50

45

40

DRAIN TO SOURCE ON RESISTANCE (m Ω)

0102030

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

20

, DRAIN CURRENT (A)

D

I

10

0

012345

3.0

2.5

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 10V, ID =9A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDB2572 / FDP2572 Rev. B