Fairchild Semiconductor FDB045AN08A0 Datasheet

FDB045AN08A0

N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ

FDB045AN08A0

April 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82684

MOSFET Maximum Ratings T

= 3.9mΩ (Typ.), V

DS(ON)

(tot) = 92nC (Typ.), V

g

GA TE

SOURCE

= 10V, ID = 80A

GS

= 10V

GS

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

Applications

• 42V Automotiv e Load Control

• Starter / Alternator Systems

• Electronic Power Steering Systems

• Electronic Valve Train Systems

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 75 V Gate to Source Voltage ±20 V Drain Curr e nt

I

D

Continuous (T Continuous (T

< 145oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 19 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 600 mJ Power dissipation 310 W Derate above 25

o

C2.0W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-263 0.48 Thermal Resistance Junction t o Ambient TO-263 (No te 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB045AN08A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB045 AN08A0 FDB045AN08A0 TO-263AB 330mm 24mm 800 uni ts

FDB045AN08A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 75 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 80A, VGS = 10V - 0.0039 0.0045

D

I

= 37A, VGS = 6V - 0.005 6 0.0084

Drain to S ou r c e On Re si st ance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.008 0.011

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 1000 - pF Reverse Transfer Capacitance - 240 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 11 17 nC Gate to Source Gate Charg e - 2 7 - nC Gate Charge Threshold to Plateau - 16 - nC

V

DD

I

= 80A

D

I

= 1.0m A

g

= 40V

Gate to Drain “Miller” Charge - 21 - nC

- 6600 - pF

92 138 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 18 - ns Rise Time - 88 - ns Turn-Off Delay Time - 40 - ns Fall Time - 45 - ns Turn-Off Time - - 128 ns

(VGS = 10V)

= 40V, ID = 80A

V

DD

V

= 10V, RGS = 3.3Ω

GS

--160ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode V oltage Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -53ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -54nC

= 25°C, L = 0.48mH, IAS = 50A.

J

SD

= 40A - - 1.0 V

I

SD

FDB045AN08A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

200

160

120

80

, DRAIN CURRENT (A)

D

I

40

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

50

10

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-5

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB045AN08A0

Typical Characteristics T

2000

1000

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE

TJ = MAX RATED T

= 25oC

C

0.1

0.1 1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

120

90

TJ = 175oC

60

, DRAIN CURRENT (A) I

TJ = 25oC

D

30

0

4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

STARTING TJ = 150oC

I

1

.01 0.1 1 10 100

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

150

VGS = 10V VGS = 7V

120

VGS = 6V

90

60

, DRAIN CURRENT (A)

D

I

30

0

0 0.5 1.0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 5V

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

7

VGS = 6V

6

5

VGS = 10V

4

DRAIN TO SOURCE ON RESISTANCE(mΩ)

3

0 20406080

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID =80A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature