Fairchild Semiconductor FDB035AN06A0 Datasheet

FDB035AN06A0

N-Channel PowerTrench® MOSFET
60V, 80A, 3.5mΩ

FDB035AN06A0

July 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82584

MOSFET Maximum Ratings T

= 3.2mΩ (Typ.), V

DS(ON)

(tot) = 95nC (Typ.), V

g

GATE

SOURCE

= 10V, ID = 80A

GS

= 10V

GS

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V
Gate to Source Voltage ±20 V
Drain Curr e nt

I

D

Continuous (T
Continuous (T

< 153oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 22 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 625 mJ
Power dissipation 310 W
Derate above 25

o

C2.07W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

©2002 Fairchild Semiconductor Corporation

ThermalResistance Junctionto Case TO-263 0.48
ThermalResistance Junctionto Ambient TO-263, (Note 2) 62
ThermalResistanceJunctionto AmbientTO-263,1in2copper pad area 43

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDB035AN06A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB035AN06A0 FDB035AN06A0 TO-263AB 330mm 24mm 800 units

FDB035AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 80A, VGS = 10V - 0.0032 0.0035

D

I

= 40A, VGS = 6V - 0.0044 0.0066

Drain to S ou r c e On Re si st ance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.0065 0.0071

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 1123 - pF
Reverse Transfer Capacitance - 367 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 12 15 nC
Gate to Source Gate Charg e - 30 - nC
Gate Charge Threshold to Plateau - 18 - nC

V

DD

I

= 80A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 24 - nC

- 6400 - pF

95 124 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 93 - ns
Turn-Off D elay Time - 38 - ns
Fall Time - 13 - ns
Turn-Off Time - - 75 ns

(VGS = 10V)

= 30V, ID = 80A

V

DD

V

= 10V, RGS = 2.4Ω

GS

--163ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

Source to Drain Diode V oltage
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -38ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -39nC

= 25°C, L = 0.255mH, IAS = 70A.

J

SD

= 40A - - 1.0 V

I

SD

FDB035AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED
BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

TRANSCONDUCTANCE
MAY LIMIT CURRENT

1000

IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A

FDB035AN06A0

Typical Characteristics T

2000

1000

100

OPERATION IN THIS

AREA MAY BE

10

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE
TJ = MAX RATED

T

= 25oC

C

0.1
1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

10µs

100µs

1ms

DC

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

120

10ms

100

STARTING TJ = 25oC

STARTING TJ = 150oC

10

, AVALANCHE CURRENT (A)
I

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

AS

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

160

120

VGS = 20V

VGS = 6V

VGS = 10V

VGS = 5V

80

, DRAIN CURRENT (A)

D

I

40

0

3.0 3.5 4.0 4.5 5.0 5.5 6

TJ = 175oC

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 6V

4

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE(mΩ)

3

0 20406080

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

80

, DRAIN CURRENT (A)

D

I

40

PULSE DURATION = 80µs

0

0 0.5 1.0 1.5

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

TC = 25oC

VGS = 10V, ID =80A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDB035AN06A0 Rev. A