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74VHC4316
Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings are those values beyond which dam-
age to the device may occur.
Note 2: Unless otherwise specified all voltages are referen c ed to ground.
Note 3: Power Dissipation temper ature dera ting — plas tic “N” packa ge: −
12 mW/°C from 65 °C to 85°C.
DC Electrical Characteristics (Note 4)
Note 4: For a power supply of 5V ±10% the worst case on resistances (RON) occurs for VHC a t 4. 5V. Thus the 4.5V values should be used when designi ng
with this supply. Worst case V
IH
and VIL occur at VCC = 5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst cas e leakage current occurs
for CMOS at the higher voltage and so the 5.5V values should be used.
Note 5: At supply voltag es (V
CC–VEE
) approaching 2V the analo g switch on resist ance becom es extr emely non- linear. Therefore it is recom mended that
these devices be us ed to transmit digital only w hen using these supply voltages.
Supply Voltage (VCC) −0.5 to +7.5V
Supply Voltage (V
EE
) +0.5 to −7.5V
DC Control Input Voltage (V
IN
) −1.5 to VCC+1.5V
DC Switch I/O Voltage (V
IO
)V
EE
−0.5 to VCC+0.5V
Clamp Diode Current (I
IK
, IOK) ±20 mA
DC Output Current, per pin (I
OUT
) ±25 mA
DC V
CC
or GND Current, per pin (ICC) ±50 mA
Storage Temperature Range (T
STG
) −65°C to +150°C
Power Dissipation (P
D
) (Note 3) 600 mW
S.O. Package only 500 mW
Lead Temperature (T
L
)
(Soldering 10 seconds) 260°C
Min Max Units
Supply Voltage (V
CC
)26V
Supply Voltage (V
EE
)0−6V
DC Input or Output Voltage 0 V
CC
V
(V
IN
, V
OUT
)
Operating Temperature Range (T
A
) −40 +85 °C
Input Rise or Fall Times
(t
r
, tf)VCC = 2.0V 1000 ns
V
CC
= 4.5V 500 ns
V
CC
= 6.0V 400 ns
V
CC
= 12.0V 250 ns
Symbol Parameter Conditions
V
EE
V
CC
TA = 25°CTA = −40°C to +85°C
Units
Typ Guaranteed Limits
V
IH
Minimum HIGH 2.0V 1.5 1.5
Level Input 4.5V 3.15 3.15 V
Voltage 6.0V 4.2 4.2
V
IL
Maximum LOW 2.0V 0.5 0.5
Level Input 4.5V 1.35 1.35 V
Voltage 6.0V 1.8 1.8
R
ON
Minimum “ON” V
CTL
= VIH, GND 4.5V 100 170 200 Ω
Resistance IS = 2.0 mA −4.5V 4.5V 40 85 105
(Note 5) VIS = VCC to V
EE
−6.0V 6.0V 30 70 85
(
Figure 1
)
V
CTL
= VIH, GND 2.0V 100 180 215
IS = 2.0 mA GND 4.5V 40 80 100
VIS = VCC or V
EE
−4.5V 4.5V 50 60 75
(
Figure 1
) −6.0V 6.0V 20 40 60
R
ON
Maximum “ON” V
CTL
= V
IH
GND 4.5V 10 15 20
Resistance VIS = VCC to V
EE
−4.5V 4.5V 5 10 15 Ω
Matching −6.0V 6.0V 5 10 15
I
IN
Maximum Control VIN = VCC or GND GND 6.0V ±0.1 ±1.0 µA
Input Current
I
IZ
Maximum Switch VOS = VCC or V
EE
“OFF” Leakage VIS = VEE or V
CC
GND 6.0V ±30 ±300 nA
Current V
CTL
= V
IL
−6.0V 6.0V ±50 ±500
(
Figure 2
)
I
IZ
Maximum Switch VIS = VCC to V
EE
“ON” Leakage V
CTL
= VIH, GND 6.0V ±20 ±75 nA
Current VOS = OPEN −6.0V 6.0V ±30 ±150
(
Figure 3
)
I
CC
Maximum Quiescent VIN = VCC or GND GND 6.0V 1.0 10 µA
Supply Current I
OUT
= 0 µA −6.0V 6.0V 4.0 40