Fairchild Semiconductor 74LVQ125SJX, 74LVQ125SJ, 74LVQ125SCX, 74LVQ125SC Datasheet

74LVQ125 Low Voltage Quad Buffer with 3-STATE Outputs
General Description
The LVQ125containsfourindependentnon-invertingbuffers with 3-STATE outputs.
Features
n Ideal for low power/low noise 3.3V applications n Guaranteed simultaneous switching noise level and
n Guaranteed pin-to-pin skew AC performance n Guaranteed incident wave switching into 75
Ordering Code:
Order Number Package Number Package Description
74LVQ125SC M14A 14-Lead (0.150" Wide) Small Outline Integrated Circuit, SOIC JEDEC 74LVQ125SJ M14D 14-Lead Small Outline Package, SOIC EIAJ
Device also available in Tape and Reel. Specify by appending suffix letter “X” to the ordering code.
Logic Symbol
Pin Descriptions
Pin Names Description
A
n,Bn
Inputs
O
n
Outputs
Connection Diagram
Truth Table
Inputs Output
A
n
B
n
O
n
LL L LH H HX Z
H
=
HIGH Voltage Level L=LOW Voltage Level Z=HIGH Impedance X=Immaterial
IEEE/IEC
DS011349-1
Pin Assignment for
SOIC JEDEC and EIAJ
DS011349-2
May 1998
74LVQ125 Low Voltage Quad Buffer with 3-STATE Outputs
© 1998 Fairchild Semiconductor Corporation DS011349 www.fairchildsemi.com
Absolute Maximum Ratings (Note 1)
Supply Voltage (V
CC
) −0.5V to +7.0V
DC Input Diode Current (I
IK
)
V
I
=
−0.5V −20 mA
V
I
=
V
CC
+ 0.5V +20 mA
DC Input Voltage (V
I
) −0.5V to VCC+ 0.5V
DC Output Diode Current (I
OK
)
V
O
=
−0.5V −20 mA
V
O
=
V
CC
+ 0.5V +20 mA
DC Output Voltage (V
O
) −0.5V to to VCC+ 0.5V
DC Output Source
or Sink Current (I
O
)
±
50 mA
DC V
CC
or Ground Current
(I
CC
or I
GND
)
±
200 mA
Storage Temperature (T
STG
) −65˚C to +150˚C DC Latch-Up Source or Sink Current
±
100 mA
Recommended Operating Conditions
(Note 2)
Supply Voltage (V
CC
) 2.0V to 3.6V
Input Voltage (V
I
) 0VtoV
CC
Output Voltage (VO) 0VtoV
CC
Operating Temperature (TA) −40˚C to +85˚C Minimum Input Edge Rate (V/t)
V
IN
from 0.8V to 2.0V
V
CC
@
3.0V 125 mV/ns
Note 1: The “Absolute Maximum Ratings” are those values beyond which the safety of thedevice cannot be guaranteed. The device should not be op­erated at these limits. The parametric values defined in the Electrical Charac­teritics tables are not guaranteed at the absolute maximum ratings. The “Rec­ommended Operating Conditions” table will define the conditions for actual device operation.
Note 2: Unused inputs must be held HIGH or LOW. They may not float.
DC Electrical Characteristics
Symbol Parameter
V
CC
(V)
T
A
=
+25˚C T
A
=
−40˚C to +85˚ C Units Conditions
Typ Guaranteed Limits
V
IH
Minimum High Level Input Voltage
3.0 1.5 2.0 2.0 V V
OUT
=
0.1V
or V
CC
− 0.1V
V
IL
Maximum Low Level Input Voltage
3.0 1.5 0.8 0.8 V V
OUT
=
0.1V
or V
CC
− 0.1V
V
OH
Minimum High Level Output Voltage
3.0 2.99 2.9 2.9 V I
OUT
=
−50 µA
3.0 2.58 2.48 V V
IN
=
V
IL
or VIH(Note 3)
I
OH
=
−12 mA
V
OL
Maximum Low Level Output Voltage
3.0 0.002 0.1 0.1 V I
OUT
=
50 µA
3.0 0.36 0.44 V V
IN
=
V
IL
or VIH(Note 3)
I
OL
=
12 mA
I
IN
Maximum Input Leakage Current
3.6
±
0.1
±
1.0 µA V
I
=
V
CC
, GND
I
OZ
Maximum 3-STATE Leakage Current
VI(OE)=VIL,V
IH
3.6
±
0.25
±
2.5 µA V
I
=
V
CC
, GND
V
O
=
V
CC
, GND
I
OLD
Minimum Dynamic (Note 4) Output Current
3.6 36 mA V
OLD
=
0.8V Min (Note 5)
I
OHD
3.6 −25 mA V
OHD
=
2.0V Min (Note 5)
I
CC
Maximum Quiescent Supply Current
3.6 4.0 40.0 µA V
IN
=
V
CC
or GND
V
OLP
Quiet Output Maximum Dynamic V
OL
3.3 0.6 1.0 V (Notes 6, 7)
V
OLV
Quiet Output Minimum Dynamic V
OL
3.3 −0.6 −1.0 V (Notes 6, 7)
V
IHD
Maximum High Level Dynamic Input Voltage
3.3 1.7 2.0 V (Notes 6, 8)
V
ILD
Maximum Low Level Dynamic Input Voltage
3.3 1.5 0.8 V (Notes 6, 8)
Note 3: All outputs loaded; thresholds on input associated with output under test. Note 4: Maximum test duration 2.0 ms, one output loaded at a time. Note 5: Incident wave switching on transmission lines with impedances as low as 75for commercial temperature range is guaranteed for 74LVQ. Note 6: Worst case package. Note 7: Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V; one output at GND. Note 8: Max number of Data Inputs (n) switching. (n − 1) inputs switching 0V to 3.3V. Input-under-test switching: 3.3V to threshold (V
ILD
), 0V to threshold (V
IHD
),
f=1 MHz.
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