Fairchild (Now ON) 2N5086, 2N5087, MMBT5087 Schematic [ru]
2N5086/2N5087/MMBT5087
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
TO-92
Absolute Maximum Ratings*
1
1. Emitter 2. Base 3. Collector
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage -50 V
Collector-Base Voltage -50 V
Emitter-Base Voltage -3.0 V
Collector current - Continuous -100 mA
Junction and Storage Temperature -55 ~ +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Mi n. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CBO
Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V
Collector Cutoff Current VCB = -10V, IE = 0
V
= -35V, IE = 0
CB
Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = -100µA, VCE = -5.0V
= -1.0mA, VCE = -5.0V
I
C
I
= -10mA, VCE = -5.0V
C
Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V
Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V
Small Signal Characteristics
f
T
C
cb
h
fe
Current Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz 40 MHz
Collector-Base Capacitance V
= -5.0V, IE = 0, f = 100KHz 4.0 pF
CB
Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V,
f = 1.0KHz
NF Noise Figure I
= -100µA, VCE = -5.0V
C
= 3.0kΩ, f = 1.0KHz
R
S
3
2
SOT-23
1
Mark: 2Q
1. Base 2. Emitter 3. Collector
-10
-50
5086
5087
5086
5087
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
150
250
500
800
600
900
3.0
2.0
nA
nA
dB
dB
I
= -20µA, VCE = -5.0V
C
= 10kΩ
R
S
5086
5087
3.0
2.0
dB
dB
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Thermal Characteristics T
Symbol Parameter
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 °C/W
=25°C unless otherwise noted
a
2N5086
2N5087
625
5.0
Max.
*MMBT5087
350
2.8
Units
mW
mW/°C
©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003
Typical Characteristics
β
0.1 1 10
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLL ECT OR CU RR EN T (mA )
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β
= 10
25 °C
- 40 °C
125 °C
β
β
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
β
β
048121620
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAP ACITAN CE (pF)
f = 1 MHz
C
obo
C
ibo
β
2N5086/2N5087/MMBT5087
350
300
125 °C
V = 5V
CB
250
200
25 °C
150
- 40 °C
100
50
FE
0.01 0.03 0.1 0.3 1 3 10 30 100
h - TYPICAL PULSED CU R RENT GAIN
I - COLLECTOR CURRENT (mA)
C
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
- 40 °C
25 °C
125 °C
β
= 10
BESAT
0
V - BASE EMITTER VOLTAG E (V )
0.1 1 10 50
I - COLLECTOR CURRE NT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
100
V = 40V
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT (nA)
0.01
25 50 75 100 125
©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003
Figure 5. Collector Cutoff Current
T - A MBIE NT T EMP ERATURE ( C)
A
vs Ambient Temperature
Figure 4. Base-Emitter On Voltage
vs Collector Current
°
Figure 6. Input and Output Capacitance
vs Reverse Voltag
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