Fairchild (Now ON) KSA812, KSA812 Schematic [ru]
KSA812
Low Frequency Amplifier
• Collector-Base Voltage : V
• Complement to KSC1623
PNP Epitaxial Silicon Transistor
CBO
= -60V
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KSA812
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -60 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -100 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
V
CE
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.62 -0.65 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
DC Current Gain VCE= -6V, IC= -1mA 90 200 600
Current Gain Bandwidth Product VCE= -6V, IC= -10mA 180 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 4.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G L
h
FE
90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600
Marking
D1O
grade
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
KSA812
-50
-45
-40
-35
-30
-25
-20
-15
-10
[mA], COLLECTOR CURRENT
C
I
-5
0
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -400µA
IB = -350µA
IB = -300µA
IB = -250µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
IC = 10 I
1000
VCE = -6V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = -6V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
f = 1MHz
1000
100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
10
-1 -10
IC[mA], COLLECTOR CURRENT
VCE = -6V
Rev. A1, June 2001
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