Fairchild (Now ON) IPD20N03L, IPD20N03L Schematic [ru]

HGT1S20N60A4S9A

March 2006Data Sheet

600V, SMPS Series N-Channel IGBTs

The HGT1S20N60A4S9A is MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49339.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT1S20N60A4S9A TO-263AB 20N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T

• Low Conduction Lo ss

• Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Solde ring Surface Mount

Components to PC Boards

Packaging

JEDEC TO-263AB

COLLECTOR
(FLANGE)

G

C

E

= 125oC

J

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4 ,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4 ,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4 ,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4 ,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4 ,969,027

©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A

HGT1S20N60A4S9A

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGT1S20N60A4S9A UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

C25

C110

CM

GES

GEM

D

STG

Maximum Lead T emperature f or Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

70 A
40 A

280 A

±20 V
±30 V

290 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT) IC

GE(TH) IC

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, V

= 0V 15 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC --2.0 mA

J

= 20A,

V

GE

= 15V

T

= 25oC -1.8 2.7 V

J

T

= 125oC -1.6 2.0 V

J

= 250µA, VCE = 600V 4.5 5.5 7.0 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

100 - - A

IC = 20A, VCE = 300V - 8.6 - V
IC = 20A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC

= 20A

I

CE

V

= 390V

CE

=15V -73 - ns

V

GE

= 3Ω

R

G

L = 500µH

V

= 15V - 142 162 nC

GE

V

= 20V - 182 210 nC

GE

-15 - ns

-12 - ns

-32 - ns

Test Circuit (Figure 20) - 105 - µJ

- 280 350 µJ

- 150 200 µJ

©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A

HGT1S20N60A4S9A

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 20A

CE

= 390V

V

CE

= 15V - 105 135 ns

V

GE

R

= 3Ω

G

L = 500µH
Test Circuit (Figure 20)

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. T his test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves

100

80

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

ON1
J

Unless Otherwise Specified

DIE CAPABILITY

V

= 15V

GE

120

TJ = 150oC, RG = 3Ω, V

100

-15 21 ns

-13 18 ns

-55 73 ns

- 115 - µJ

- 510 600 µJ

- 330 500 µJ

- - 0.43

is the turn-on loss of the IGBT only. E

o

C/W

ON2

as the IGBT. The diode type is specified in

= 15V, L = 100µH

GE

, DC COLLECTOR CURRENT (A)
I

60

40

20

CE

0

25

PACKAGE LIMIT

50

TC, CASE TEMPERATURE (oC)

75 100 125 150

, COLLECTOR TO EMITTER CURRENT (A)
I

CE

80

60

40

20

0

0

100 200 300 400 500 600

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)
= 0.43oC/W, SEE NOTES

R

ØJC

TJ = 125oC, RG = 3Ω, L = 500µH, V

5

I

, OPERATING FREQUENCY (kHz)

MAX

f

100

40

d(OFF)I

10 20

, COLLECTOR TO EMITTER CURRENT (A)

CE

ON2

+ t

d(ON)I

+ E

OFF

T

V

C

GE

o

75

C

15V

)

)

= 390V

CE

30 40

50

14

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

10 11 12

VCE = 390V, RG = 3Ω, TJ = 125oC

V

GE

I

SC

t

SC

13 14

, GATE TO EMITTE R VOLTAGE (V)

15

450

400

350

300

250

200

150

100

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

, PEAK SHORT CIRCUIT CURRENT (A)
I

SC

©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A