Fairchild (Now ON) FDMC8296 Schematic

FDMC8296

N-Channel Power Trench®MOSFET

30V, 18A, 8.0m:

Features

 Max r

 High performance trench technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 8.0m: at VGS = 10V, ID = 12A

DS(on)

= 13.0m: at VGS = 4.5V, ID = 10A

DS(on)

June 2014



General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well applications common in Notebook Computers and Portable Battery Packs.

suited for Power Management and load switching

Application

 DC - DC Buck Converter

 Notebook battery power management

 Load switch in N

otebook

®

process that has

FDMC8296 N-Channel Power Trench

®

MOSFET

Top

Bottom

G

S

D

5

D

6

D

7

8

D

MLP 3.3x3.3

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

T

J

STG

, T

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous TC= 25°C 18

-Continuous TA= 25°C

-Pulsed

Single

P

ulse Avalanche Energy (Note 3)

Power Dissipation

Power D

Operating and Storage Junction Temperature Range

ssipation T

i

TA= 25°C unless otherwise noted

T

= 25°C

C

= 25°C

A

(Note 1a)

12 52

72

27

2.3

-55 to +150 °C

Thermal Characteristics

G

4

S

3

S

2

S

1

A

mJ

W

R

TJC

R

TJA

Thermal Resistance, Junction to Ca

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8296 FDMC8296 MLP 3.3X3.3 13 ’’

miconductor Corporation

se 4.6

(Note 1a) 53

12 mm 3000 units

1

°C/W

www.fairchildsemi.com

FDMC8296 N-Channel Power Trench

Electrical Characteristics

TJ = 25°C

unless otherwi

se noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to

Source Breakdown Voltage I

Breakdown

Voltage Temperature

Coefficient

Zero Gate V

Gate to Source Le

oltage Drain Current

akage Current V

= 250PA, VGS = 0

D

I

= 250PA, reference

D

= 24V, 1

V

DS

= 0V,

V

GS

±20V, V

=

GS

V 30 V

d to 25°C 17 mV/°C

=

T

125°C 250

J

= 0V

DS

±100 nA

On Characteristics

V

GS(th)

'V

GS(th)

'T



J

r

(on)

DS

g

FS

Dyn

amic Characteristics

C

iss

C

os

s

C

s

rs

R

g

Gate to Source T

Gate to Source Threshold V

hreshold Voltage V

oltage

Temperature Coefficient

S

tatic Drain to Source On Resistance

Forward T

Input C

Output Cap

ansconductance V

r

apacitance

acit

ance 513 685 pF

Reverse Transfer Capacitance 87 135 pF

Gate Resi

stance f = 1MHz 0.9 :

= VDS, ID = 250PA 1.

GS

= 250PA, referenced to

I

D

V

GS

V

GS

DD

V f = 1MHz

, I

= 10V

= 4.5V

= 10V

= 5V

= 15V, VGS = 0V,

DS

= 12A 6.5

D

= 10A 9.5

, I

D

= 12A, TJ = 125°

, I

D

, I

= 12A 44 S

D

25

°C -6 mV/°C

0 1.9 3.0 V

8.0

13.0

C 9.0 12.8

1

038 1385 pF

m:V

PA

®

MOSFET

Switching Char

t

n)

d(o

t

r

t

d(o

ff)

t

f

Q

g(T

OT)

Q

gs

Q

gd

acteristics

Turn-On Delay Time

Rise T

ime 310ns

T

urn-Off Delay Time 19 35 ns

all T

F

ime 210ns

T

otal Gate Charge

T

otal Gate Charge 3nC

Gate to Drain

Drain-Source Dio

V

SD

t

rr

Q

rr

NOTES:

1. R

is d

TJA

the user's board design.

Source to D

Reverse Recovery T

Reverse Recovery Charge 9

etermined with the device mounte d on a 1in

“Miller”

Charge 2.5 nC

de Characteristics

rain Diode Forward Voltage

ime

2

p

ad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a

. 53 °C/W when mounted on

a 1 i n

VDD = 15V, ID = 12A, V

GS

VGS= 0V to 10V

V

GS

V

GS

V

GS

=

I

F

2

p

ad of 2 oz copper

= 10V, R

= 0V to 4

= 0V, IS=

= 0V,

= 6:

GEN

.5V 7.6 10.6 nC

V

DD

I

D

12A (Note 2) 0.82 1.3

=

I

1.9A (Note 2) 0.73 1.2

S

12A, di/dt = 100A/Ps

= 15V

= 12A

91

16

,

25 45 ns

i

s guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

8ns

23 nC

V

is de

nC

termined by

18

TCA

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. EAS of 72 mJ is based on starting T = 25 C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS= 5.7 A.



©2

010 Fairchild Semiconductor Corporation

FDMC8296 Rev.C

3

2

www.fa

irchildsemi.com

FDMC8296 N-Channel Power Trench

Typical Characteristics

50

VGS = 10V

40

30

20

IN CURRENT (A)

DRA

,

10

D

I

0

01

Figure 1.

1.8

ID = 12 V

1.6

1.4

LIZED

1.2

1.0

NORMA

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-5

0 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 4.5V

VGS = 4V

LSE DURATION = 80

PU DUT

Y CYCLE = 0.5%MAX

2345

IN TO SOURCE VOLTAGE (V)

V

DRA

,

DS

On-Region Characteristics Figure 2.

A

V

= 10

GS

T

JU

,

NCTION TEMPERATURE

J

vs. Junction Temperature

TJ = 25°C unless otherw

VGS = 3.5V

P

s

VGS = 3V

o

(

C)

ise noted

6

PULSE DURATION = 80Ps

5

DUTY CYCLE = 0.5%MAX

VGS = 3V

4

ALIZED

NORM

3

2

VGS = 3.5V

V

= 4V

GS

= 4.5V

1

V

=10

DRAIN TO SOURCE ON-RESISTANCE

0

0 1

020304050

N CURRENT(A)

,

I

DRAI

D

r m a l i z e d O n - R e s i s t a n c e

N o

GS

vs. Drain Current and Gate Voltage

50

)

:

m

40

(

TO

30

DRAIN

,

20

DS(on)

r

10

SOURCE ON-RESISTANCE

0

TJ= 25oC

246810

V

GAT

,

GS

n - R e si s t a n c e v s. G a t e t o

Figure 4.

O

SE DURATION = 80

PUL DUTY CY

CLE = 0.5%MAX

A

ID= 12

TJ= 125oC

E TO SOURCE VOLTAGE (V)

P

s

Source Voltage

V

®

MOSFET

50

SE DURATION = 80

PUL DUT

40

Y CYCLE = 0.5%MAX

VDS= 5V

30

20

DRAIN CURRENT (A) ,

10

D

I

0

12345

TJ= 150oC

VGS,

Figure 5. Transfer Characteristics

10 Fairchild Semiconductor Corporation

s

P

TJ= 25oC

o

TJ= -5

C

5

GATE TO SOURCE VOLTAGE (V)

50

V

= 0V

GS

10

1

TJ= 150oC

TJ = 25oC

0.1

o

TJ = -5

C

EVERSE DRAIN CURRENT (A)

0.01

, R

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Y DIODE FORWARD VOLTAGE (V)

VSD, BOD

Figu

re 6.

u r c e to D r a i n D i o de

S o

5

Forward Voltage vs. Source Current

3

www.fairchild

semi.com

Fairchild (Now ON) FDMC8296 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual