Datasheet BC846AMTF, BC846BMTF, BC846CMTF, BC847AMTF, BC847BMTF Datasheet (Fairchild) [ru]
...
tm
August 2006
BC846- BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Base Voltage : BC846
: BC847/850
: BC848/849
Collector-Emitter Vo ltage : BC846
: BC847/850
: BC848/849
Emitter-Base Voltage : BC846/847
: BC848/849/850
Collector Current (DC) 100 mA
Collector Power Dissipation 310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
80
50
30
65
45
30
6
5
BC846- BC850 NPN Epitaxial Silicon Transistor
V
V
V
V
V
V
V
V
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
V
BE
V
BE
f
T
C
ob
C
ib
NF Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC846- BC850 Rev. B
Collector Cut-off Current VCB=30V, IE=0 15 nA
DC Current Gain VCE=5V, IC=2mA 110 800
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
(sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
(on) Base-Emitter On Voltage VCE=5V, IC=2mA
580 660 700
90
200
700
900
VCE=5V, IC=10mA
Current Gain Bandwidth Product VCE=5V, IC=10mA,
300 MHz
f=100MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
: BC846/847/848
: BC849/850
: BC849
: BC850
VCE= 5V, IC= 200µA
RG=2KΩ, f=1KHz
VCE= 5V, IC= 200µA
RG=2KΩ, f=30~15000Hz
2
1.2
1.4
1.4
250
600
720
10
4
4
3
mV
mV
mV
mV
mV
mV
dB
dB
dB
dB
h
Classification
FE
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC846AMTF 8AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846BMTF 8AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846CMTF 8AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847AMTF 8BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847BMTF 8BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847CMTF 8BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848AMTF 8CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848BMTF 8CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848CMTF 8CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849AMTF 8DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849BMTF 8DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849CMTF 8DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850AMTF 8EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850BMTF 8EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850CMTF 8EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing .
BC846- BC850 NPN Epitaxial Silicon Transistor
BC846- BC850 Rev. B
2 www.fairchildsemi.com
Typical Performance Characteristics
BC846- BC850 NPN Epitaxial Silicon Transistor
IB = 400µA
IB = 350µA
IB = 300µA
IB = 250µA
100
80
60
IB = 200µA
40
IB = 150µA
IB = 100µA
[mA], COLLECTOR CURRENT
20
C
I
0
0 4 8 121620
IB = 50µA
VCE[V], COLL E CTOR-EMITTE R V OLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
1000
100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
10
1 10 100 1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC = 10 I
10000
VCE = 5V
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
100
B
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.00.20.40.60.81.01.2
VCE = 2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100 1000
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
BC846- BC850 Rev. B
f=1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
VCE=5V
100
10
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
1
f
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
3 www.fairchildsemi.com
Mechanical Dimensions
0
F
3
N
0.40
±0.03
BC846- BC850 NPN Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
BC846- BC850 Rev. B
Dimensions in Millimeters
4 www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademark s Fairchild Semic onduct or owns or is autho rized to use an d is not inten ded to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
®
FAST
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
2
I
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
®
UltraFET
UniFET™
VCX™
Wire™
®
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONV EY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WAR RAN TY THE REIN, WH ICH COVERS THESE PRODUCTS.
BC846- BC850 NPN Epitaxial Silicon Transistor
BC846- BC850 NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reaso nably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Prod uction This datasheet contains prelimina ry data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to im prove
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference informatio n only.
BC846- BC850 Rev. B
Rev. I20
5 www.fairchildsemi.com
Loading...