Fairchild (Now ON) BAS16, BAS16 Schematic [ru]

BAS16

BAS16

3

3

3

A6

Connection Diagram

2

1

SOT-23

Small Signal Diode

Absolute Maximum Ratings* T

Symbol

V

Maximum Repetitive Reverse Voltage 85 V

RRM

I

Average Rectified Forward Current 200 mA

F(AV)

I

Non-repetitive Peak Forward Surge Current

FSM

Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

T
TJ

stg

Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

PD Power Dissipation 350 mW
R

θJA

Thermal Resistance, Junction to Ambient 357

Parameter

Parameter

1

= 25°C unless otherwise noted

A

2

1

Value

1.0

2.0

Value

2NC

Units

A
A

C

°

C

°

Units

C/W

°

Electrical Characteristics T

Symbol

VR Breakdown Voltage
VF Forward Voltage IF = 1.0 mA

IR Reverse Current

CT Total Capacitance
trr

2001 Fairchild Semiconductor Corporation

Reverse Recovery Time I

Parameter

= 25°C unless otherwise noted

A

Test Conditions

= 5.0 µA

I

R

= 10 mA

I

F

= 50 mA

I

F

= 150 mA

I

F

= 75 V

V

R

= 25 V, TA = 150°C

V

R

V

= 75 V, TA = 150°C

R

V

= 0, f = 1.0 MHz

R

= IR = 10 mA, I

F

= 100 Ω

R

L

= 1.0 mA,

RR

Min

85

Max Units

715
855

1.0

1.25

1.0
30
50

2.0 pF

6.0 ns

V

mV
mV

V
V

A

µ

A

µ

A

µ

BAS16, Rev. C

T ypical Characteristics

BAS16

Small Signal Diode

(continued)

150

Ta= 25 °C

[v]

R

140

130

120

Reverse Voltage, V

R

110

1 2 3 5 10 20 30 50 100

Reverse Current, IR [uA]

Figure 1. Reverse Voltage vs Reverse Current

BV - 1.0 to 100 uA

485

Ta= 25°C

450

[mV]

F

400

350

300

Forward Voltage, V

250

F

225

1 2 3 5 10 20 30 50 100

Forward Current, IF [uA]

F

Figure 3. Forward Voltage vs Forward Current

VF - 1.0 to 100 uA

Ta= 25°C

300
250

[nA]

R

200
150
100

50

Reverse Current, I

0

10 20 30 50 70 100

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature

Reverse Voltage, VR [v]

Figure 2. Reverse Current vs Reverse Voltage

IR - 10 to 100 V

725

Ta= 25°C

700

[mV]

F

650

600

550

500

Forward Voltage, V

F

450

0.1 0.2 0.3 0.5 1 2 3 5 10

Forward Current, IF [mA]

Figure 4. Forward Voltage vs Forward Current

VF - 0.1 to 10 mA

1.5

Ta= 25°C

1.4

[V]

F

1.2

1

0.8

Forward Voltage, V

F

0.6

10 20 30 50 100 200 300 500

Forward Current, IF [mA]

Figure 5. Forward Voltage vs Forward Current

VF - 10 - 800 mA

1.3

Ta= 25°C

[pF]

T

1.2

1.1

Total Capacitance, C

1

02468101214

Reverse Voltage [V]

Figure 6. Total Capacitance

15

BAS16, Rev. C