Fairchild (Now ON) 1N4148WT, 1N4448WT, 1N914BWT, 1N4148WT, 1N4448WT Schematic [ru]
...
1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
March 2008
• Fast Switching Diode (Trr <4.0nsec)
• Flat Lead, Surface Mount Device under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
Device Marking Code
Device T ype Device Mark ing
1N4148WT E1
1N4448WT E2
1N914BWT E3
• Green Mold Compound
SOD-523F
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Band Indicates Cathode*
Symbol Parameter Value Units
V
RSM
V
RRM
I
FRM
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Non-Repetitive Peak Reverse Voltage 75 V
Repetitive Peak Reverse Voltage 75 V
Repetitive Peak Forward Current 300 mA
Operating Junction Temperature Range -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Thermal Characteristics
Symbol Parameter Value Unit
R
θJA
P
D
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics* T
Symbol Parameter Test Conditions Min Typ Max Units
BV
R
I
R
V
F
C
O
T
RR
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 1
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance VR = 0, f = 1 MHz 4 pF
Reverse Recovery Time
Thermal Resistance, Junction to Ambient 500 °C/W
Power Dissipation(TC=25°C) 200 mW
=25°C unless otherwise noted
a
1N4448WT/ 914WT
1N4448WT
1N4448WT/ 914WT
IR = 100 μA
IR = 5 μA
VR = 20 V
VR = 75 V
IF = 5 mA
IF = 10 mA
IF = 100 mA
I F = 10 mA, VR = 6.0 V
I
= 1 mA, RL = 100 Ω
RR
100
75
25
5
0.62 0.72
1
1
4 nS
nA
μA
V
V
Typical Performance Characteristics
[mA]
0.58
0.56
0.54
0.52
0.50
Capacitance [pF]
0.48
0.46
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
Total Capacitance
TA=25°C
0.44
02468101214
Reverse Voltage (V)
Forward Voltage vs Ambient Temperature
Typical
1.2
1.0
0.8
0.6
0.4
Ta=-40°C
Ta=25°C
Ta=150°C
VF- Forward Voltage [V]
0.2
0.0
0.01 0.1 1 10 100
Forward Current, I
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 2
F
Typical Performance Characteristics
]
250
200
150
100
50
PD - Power Dissipation [mW]
0
0 25 50 75 100 125 150 175
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
Power Derating Curve
Temperature [°C
5
Reverse Current vs Reverse Voltage
10
4
10
Ta=150°C
3
10
2
10
Ta=25°C
1
10
Reverse Current [nA]
0
10
Ta=-40°C
-1
10
10 20 30 40 50 60 70 80 90 100
Reverse Voltage, VR[V]
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 3
Loading...