Fairchild (Now ON) 1N5817, 1N5818, 1N5819 Schematic [ru]
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at TA = 90°C with no thermal runaway.
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
DO-41 plastic case
COLOR BAND DENOTES CATHODE
1N5817 - 1N5819 — Schottky Barrier Rectifier
November 2010
Absolute Maximum Ratings* T
Symbol Parameter
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Maximum Repetitive Reverse Voltage
Average Rectified Forwa r d C urrent
.375” lead length @ T
Non-repetitive Peak Surge Current
8.3 ms Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +125 °C
= 25°C unless otherwise noted
A
= 90°C
A
Value
1N5817 1N5818 1N5819
20 30 40 V
1.0 A
25 A
Thermal Characteristics
Symbol Parameter Value Units
P
D
R
θJA
R
θJC
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Power Dissipation 1.25 W
Maximum Thermal Resistance, Junction to Ambient 100 °C/W
Maximum Thermal Resistance, Junction to Case 45 °C/W
Electrical Characteristics (per diode)
Symbol Parameter
V
F
I
R
C
T
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Forward Voltage @ 1.0 A
Reverse Current @ rated VR TC = 25 °C
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
@ 3.0 A
= 100 °C
T
C
1N5817 1N5818 1N5819
450
750
Value
550
875
0.5
10
110 pF
600
900
Units
Units
mV
mV
mA
mA
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5817 - 1N5819 Rev. C2 1
Typical Performance Characteristics
1N5817 - 1N5819 — Schottky Barrier Rectifier
1
[A]
F
0.75
SINGLE PHASE
HALF WAVE
0.5
0.25
0
Average Rectified Forward Current, I
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm L EAD
LENGTHS
0 20 40 60 80 100 120 140
Lead Temperature [ºC]
Figure 1. Forward Current Derating Curve
30
[A]
25
FSM
20
15
10
5
0
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
8.3ms Single Half Sine-Wave
JEDEC Method
20
10
1N5817
[A]
F
1
Forward Current, I
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
1N5818
1N5819
T = 25 C
J
Pulse Width = 300
1% Duty Cycle
º
μμμμ
S
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
400
200
[pF]
T
100
80
60
40
20
Total Capacitance, C
10
0.1 0.5 1 5 10 40 60 100
Reverse Voltage, VR [V]
T = 25 C
J
º
Figure 3. Non-Repetitive Surge Current
Figure 4. Total Capacitance
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5817 - 1N5819 Rev. C2 2
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