Fairchild ZTX614 service manual

ZTX614
NPN Darlington Transistor
• These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage.
• Sourced from process 06.
ZTX614
C
B
E
TO-226
Absolute Maximum Ratings*
TA=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
, T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 100 V Collector-Base Voltage 120 V Emitter-Base Voltage 10 V Collector Current - Continuous 800 mA Operating and Storage Junction Temperature Range -55 ~ +150 °C
STG
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage* IC = 10mA, IB = 0 100 V Collector-Emitter Breakdown Voltage IC = 100µA, IE = 0 120 V Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 10 Collector Cutoff Current VCB = 60V, IE = 0 0.1 µA Emitter Cutoff Current VEB = 8V, IC = 0 0.1 µA
On Characteristics*
h
FE
V
CE(sat)
V
BE(on)
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
DC Current Gain IC = 100mA, VCE = 5V
Collector-Emitter Saturation Voltage IC = 800mA, IB = 8mA 1.25 V Base-Emitter On Voltage IC = 800mA, VBE = 5V 1.8 V
= 500mA, VCE = 5V
I
C
5000
10000
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
Total Device Dissipation Derate above 25°C
1000
8
mW
mW/°C Thermal Resistance, Junction to Case 50 °C/W Thermal Resistance, Junction to Ambient 125 °C/W
Package Dimensions
ZTX614
TO-226
S7.87-7.37;
S15.61-14.47;
S0.51-0.36;
S0.76-
0.36;
S4.70-4.32;
S4.45-3.81;
1
S1.40-1.14;
S1.40-1.14;
32
5" TYP
S1.65-1.27;
0.51
S1.52-1.02;
2" TYP
2" TYP
S0.48-0.30;
99 95
PIN
1EE 2BC 3CB
TO-226AE (95,99)
S7.73-7.10;
S2.41-2.13;
For leadformed option ordering, refer to Tape & Reel data information.
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
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