Fairchild USB10H service manual
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USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
USB10H
February 1999
General Description
These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
Features
•
-1.9 A, -20 V. R
R
= 0.170 Ω @ V
DS(on)
= 0.250Ω @ V
DS(on)
= -4.5 V
GS
= -2.5 V
GS
• Low gate charge (3 nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
• SuperSOT
than standard SO-8); low profile (1mm thick).
.
DS(ON)
TM
-6 package: small footprint (72% smaller
• Load switch
• Battery protection
• Power management
D2
S1
4
3
D1
5
2
G2
SuperSOT -6
TM
Absolute Maximum Ratings T
G1
S2
= 25°C unless otherwise noted
A
6
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -5
Power Dissipation for Singl e Operation
Operating and Storage Juncti on Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
±
8
-1.9 A
0.96 W
0.9
0.7
V
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.
306
1999 Fairchild Semiconductor Corporation
USB10H 7’’ 8mm 3000 units
°
C/W
°
C/W
USB10H Rev. C
USB10H
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = -250 µA, Referenced to 25°C-18 mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C3 mV/
VGS = -4.5 V, ID = -1.9 A
V
= -4.5 V, ID = -1.9 A @125°C
GS
V
= -2.5 V, ID = -1.7 A
GS
On-State Drain Current VGS = -4.5 V, VDS =- 5 V -5 A
Forward Transconductance VDS = -5 V, ID = -1.9 A 4 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 441 pF
Output Capacitance 127 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
0.170
0.127
0.270
0.182
0.250
0.194
67 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 6 12 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 14 25 ns
Turn-Off Fall Time
Total Gate Charge 3 4.2 nC
Gate-Source Charge 0.7 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A,
DD
V
= -4.5 V, R
GS
V
= -10 V, ID = -1.9 A,
DS
V
= -4.5 V
GS
GEN
= 6
Ω
39ns
0.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
of the drain pins. R
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
θJA
is guaranteed by design while R
θJC
a) 130 °C/W when
mounted on a 0.125 in
pad of 2 oz. copper.
is determined by the user's board design.Both devices are assumed to be operating and
θJA
2
b) 140 °C/W when
mounted on a 0.005 in
pad of 2 oz. copper.
(Note 2)
2
-0.8 -1.2 V
c) 180 °C/W when
mounted on a 0.0015 in
pad of 2 oz. copper.
2
USB10H Rev. C
T ypical Characteristics
USB10H
12
10
8
6
4
2
D
- I , DRA IN-SOURCE CURRENT (A)
0
012345
V = -4 .5V
GS
- V , DRAIN-S O URCE VOLT A GE (V)
-4.0V
-3 .5V
DS
-3 .0V
-2 .5V
-2 .0V
2
1.8
V = -2 .5 V
1.6
1.4
1.2
DS(on)
R , N ORMALI ZED
DR AI N-SOUR C E ON -RES IST ANCE
0.8
GS
-3.0V
-3.5V
-4.0V
1
0246810
- I , DRAI N CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate Voltage.
1.6
I = -1 .9A
D
V = -4 .5V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZE D
0.8
DR AI N-SOURCE ON -RES IS T ANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TE MPERATU R E ( °C)
J
0.5
0.4
0.3
0.2
0.1
DS(ON)
R , ON-RESIS TA N CE ( OHM)
0
12345
- V , GA T E TO S O U R C E VO L T AG E (V )
GS
-4.5V
I = -1A
D
T = 12 5 °C
J
25°C
Figure 3. On-Resistance Variation
with Temperature.
10
V = -5V
DS
8
6
4
D
- I , DRAIN CURRE NT (A )
2
0
012345
-V , GAT E TO SOURCE VO L TAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V = 0V
GS
1
0.1
0.01
0.001
S
-I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T = 125 °C
J
25°C
-55°C
- V , BOD Y DI O D E F O R W AR D VO L T AGE (V )
SD
Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
USB10H Rev. C
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