Fairchild TO-92 Specification

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2N4123

C

B

E

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Collector-Emitter Voltage 30 V Collector-Base Voltage 40 V Em i t ter - Bas e V olt ag e 5. 0 V Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150

°C

Symbol Characteri st ic Max Units

P

D

R

θ

JC

R

θ

JA

 2001 Fairchild Semiconductor Corporation

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 83.3 °C/W Thermal Resistance, Junction to Ambient 200

2N4123

625

5.0

mW

mW/°C

°C/W

2N4123, Rev A

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

ON CHARACTERISTICS*

h

FE

V

CE

(sat)

V

(sat)

BE

SMALL SIGNAL CHARACTERISTICS

C

ob

C

ib

h

fe

f

T

NF Noise Figure VCE = 5.0 V, IC = 100 µA,

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 30 V Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V Em i t ter - Bas e B r e akdown Vol tage

= 10 µA, IC = 0

I

E

5.0 V Collector Cutoff Current VCB = 20 V, IE = 0 50 nA Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA

DC Cu r re n t Ga in VCE = 1.0 V, IC = 2.0 mA

V

= 1.0 V, IC = 50 mA

CE

50 25

150

Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.3 V Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V

Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF Input Capacitance VEB = 0.5 V, f = 0.1 MHz 8.0 pF Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,

f = 1. 0 kHz

= 10 mA, VCE = 20 V,

I

C

f = 100 MHz

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V

50

200

2.5

250 MHz

f = 100 MHz

6.0 dB

= 1.0 kΩ,

R

S

= 10 Hz to 15.7 kHz

B

W

2N4123

T ypical Characteristics

2N4123

NPN General Purpose Amplifier

(continued)

Typical Puls ed Curr ent Gain

vs Collector Current

500

V = 5V

400

300

200

100

0

0.1 1 10 1 00

FE

h - TYPI CAL PULSED CURR ENT GAIN

125 °C

25 °C

- 40 °C

I - COLLECTOR CURRENT (mA)

C

CE

Base-Emitter Saturation

Voltage vs Collector Current

= 10

β

1

- 40 °C

0.8

25 °C

0.6

125 °C

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation

Voltage vs Collector Curren t

CESAT

V - COLLECTOR-EMITTER VOLTAGE (V)

0.15

0.1

0.05

= 10

β

125 °C

25 °C

- 40 °C

0.1 1 10 100

I - COLLECTOR CURRENT (mA)

C

Base-Emitter ON Voltage v s

Collector Current

1

V = 5V

CE

0.8

0.6

0.4

0.2

0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

Collector-Cutoff Current vs Ambient Temperature

500

V = 30V

100

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

Capacitance vs

Reverse Bias Voltage

10

5 4

3

2

CAPACITANCE (pF)

1

°

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ibo

C

obo

Typical Characteristics (continued)

2N4123

NPN General Purpose Amplifier

(continued)

Noise Figure vs Frequency

12

I = 1.0 mA

C

Ω

R = 200

10

8

6

S

I = 50 µA

R = 1.0 k

C S

Ω

I = 0.5 mA

C

R = 200

S

Ω

V = 5.0V

CE

4

2

NF - NOISE FIGURE (dB)

0

0.1 1 10 100

I = 100 µA, R = 500

C

S

f - FREQUENCY (kHz)

Current Gain and Phase Angle

vs Frequency

50 45 40 35 30 25 20 15 10

fe

5

h - CURRENT GAIN (dB)

0

1 10 100 1000

h

fe

V = 40V

CE

I = 10 mA

C

f - FREQUENCY (MHz)

θ

Noise Figure vs Source Resistance

12

10

8

6

4

2

Ω

0

NF - NOISE FIGURE (dB)

0

0.1 1 10 100

1

20 40

θ

- DEGREES

60

0.75

80 100 120

0.5

140 160 180

0.25

D

P - POWER DISSIPATION (W)

0

0 25 50 75 100 125 150

I = 1.0 mA

C

I = 5.0 mA

C

R - SOURCE RESISTANCE ( )

S

Power Dissipation vs Ambient Temperature

SOT-223

TO-92

SOT-23

TEMPERATURE ( C)

I = 100 µA

C

o

I = 50 µA

C

k

Ω

Turn-On Time vs Collector Current

500

40V

100

TIME (nS)

10

5

2.0V

t @V = 0V

CB

d

110100

I - COLLECTOR CURRENT (mA)

15V

I = I =

B1CB2

t @V = 3.0V

CC

r

Rise Time vs Collector Curren t

I

c

10

500

T = 25°C

J

I = I =

B1CB2

V = 40V

CC

100

T = 125°C

J

r

t - RISE TIME (ns)

10

5

1 10 100

I - COLLECTOR CURRENT (mA)

I

c

10

Typical Characteristics (continued)

2N4123

NPN General Purpose Amplifier

(continued)

Storage Time vs Collector Current

500

I = I =

T = 25°C

J

100

S

t - STORAGE TIME (ns)

10

T = 125°C

J

5

1 10 100

B1CB2

I - COLLECTOR CURRENT (mA)

Current Gai n

500

100

fe

h - CURR ENT GA IN

I

c

10

V = 10 V

CE

f = 1.0 kHz

o

T = 25 C

A

Fall Time vs Collector Current

500

I = I =

T = 125°C

J

B1CB2

V = 40V

CC

100

T = 25°C

J

f

t - FALL TIME (ns)

10

5

1 10 100

I - COLLECTOR CURRENT (mA)

Output Admittan c e

100

V = 10 V

CE

f = 1.0 kHz

T = 25 C

A

o

µ

10

I

c

10

0.1 1 10

I - COLLECTOR CURRENT (mA)

C

Input Im peda nce

100

Ω

10

1

ie

h - INPUT IMPEDANCE (k )

0.1

0.1 1 10

I - COLLE C TOR CU RRENT (mA)

C

V = 10 V

CE

f = 1.0 kHz

T = 25 C

A

oe

h - OUTPUT ADMIT TANCE ( mhos)

1

0.1 1 10

4

_

10

o

7

I - COLLECTOR CURRENT (mA)

C

V oltage Feedback Ratio

V = 10 V

CE

f = 1.0 kHz

o

T = 25 C

A

5 4

3

2

re

1

h - VO LTAGE F EED B ACK RAT IO (x10 )

0.1 1 10

I - COL LECTOR CU RRE NT (mA)

C

NPN General Purpose Amplifier

(continued)

2N4123

T est Circuits

Duty Cycle

< <

<<

10

< t

< 500

< <

<<

1

Duty Cycle

3.0 V

275

C1

==

= 2%

==

- 0.5 V

0

300 ns

<<

< 1.0 ns

<<

10.6 V

10 K

ΩΩ

Ω

ΩΩ

FIGURE 1: Delay and Rise Time Equivalent T est Circuit

3.0 V

0

- 9.1 V

t

1

10.9 V

<<

< 1.0 ns

<<

10 K

ΩΩ

Ω

ΩΩ

1N916

275

==

= 2%

==

µµ

µs

µµ

ΩΩ

Ω

ΩΩ

<<

< 4.0 pF

<<

ΩΩ

Ω

ΩΩ

C1

<<

< 4.0 pF

<<

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. G