TN6727A
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
Absolute Maximum Ratings* T
V
V
V
I
C
T
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
P
R
R
C
B
E
1A. Sourced from Process 77. See TN6726A for characteristics.
ParameterSymbol
CES
CBO
EBO
J, Tstg
Symbol
D
θJC
θJA
Total Device Dissipation
Derate above 25°C
TO-226
A = 25°C unless otherwise noted
A = 25°C unless otherwise noted
Characteristic
Value
Max
TN6727A
1
8
Units
V40Collector-Emitter Voltage
V50Collector-Base Voltage
V5Emitter-Base Voltage
A1.5Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W
mW/°C
°C/W50Thermal Resistance, Junction to Case
°C/W125Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
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SMALL SIGNAL CHARACTERISTICS
PNP General Purpose Amplifier
(continued)
Electrical Characteristics T
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(on)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 1 mA
IE = 1 mA
VCB = 50 V
VEB = 5 V
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 1A, VCE = 1 V
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 1 V
55
60
50
UnitsMaxMinTest ConditionsParameterSymbol
V40
V50
V5
nA100
nA100
-
250
V0.5
V1.2
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
C
cb
h
fe
Output Capacitance
Small Signal Current Gain
VCB = 10 V, IE = 0, f = 1MHz
IC = 50 mA,VCE = 10 V, f=20MHz
pF30
-252.5
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