Fairchild TN6725A service manual
TN6725A
TN6725A
Discrete Power & Signal
Technologies
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* T
V
V
V
I
C
T
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
P
R
R
CES
CBO
EBO
J, Tstg
Symbol
D
θJC
θJA
C
B
E
ParameterSymbol
Characteristic
Total Device Dissipation
Derate above 25°C
TO-226
A = 25°C unless otherwise noted
A = 25°C unless otherwise noted
Value
Max
TN6725A
1
8
Units
V50Collector-Emitter Voltage
V60Collector-Base Voltage
V12Emitter-Base Voltage
A1.2Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W
mW/°C
°C/W50Thermal Resistance, Junction to Case
°C/W125Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
OFF CHARACTERISTICS
NPN Darlington Transistor
TN6725A
(continued)
Electrical Characteristics T
BV
CES
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
A = 25°C unless otherwise noted
IC = 1 mA
IC = 100 µA
IE = 10 µA
VCB = 40 V
VEB = 10 V
IC = 200 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
IC = 1A, VCE = 5 V
IC = 200 mA, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, IB = 2 mA
IC = 1 A, VCE = 5.0 V
25,000
15,000
4000
UnitsMaxMinTest ConditionsParameterSymbol
V50
V60
V12
nA100
nA100
-
40,000
V1.0
1.5
V2
V2
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Output Capacitance
Small Signal Current Gain
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA,VCE = 5 V, f=100MHz
pF10
-101
1997 Fairchild Semiconductor Corporation
TN6725A, Rev A
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