Fairchild TN6715A, NZT6715 service manual
TN6715A / NZT6715
TN6715A
C
B
E
TO-226
NZT6715
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
TN6715A *NZT6715
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Devi ce Dissipat ion
Derate above 25°C
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125 125
1.0
8.0
1.0
8.0
2
.
W
mW/°C
C/W
°
C/W
°
µ
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
Collector-Cutoff Current VCB = 50 V, IE = 0 0.1
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 0.1
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
C
I
= 1.0 A, VCE = 1.0 V
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V
)
C
50 V
5.0 V
A
A
55
60
50 250
Base-Emitt er On Voltage IC = 1.0 A, VCE = 1.0 V 1.2 V
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
2.5 20
f = 20 MHz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF
TN6715A / NZT6715
T ypical Characteristics
Typical Puls ed Curr ent Gain
vs Collector Current
500
V = 5V
CE
125 °C
25 °C
- 40 °C
0
0.001 0 .01 0.1 1 2
I - COLLEC TOR CURRE NT ( A)
C
h - TYPI CAL PULSED CURR ENT GA IN
400
300
200
100
FE
Colle cto r-Emi tter Satu r ation
Voltage vs Collector Current
0.6
= 10
β
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 3
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COL L E CTO R C U RRE N T (A )
C
25°C
125 °
C
- 4 0 °C
3
Typical Characteristics (continued)
TN6715A / NZT6715
NPN General Purpose Amplifier
(continued)
Bas e-E mi tter Satura ti o n
Voltage vs Collector Current
β = 10
1.2
1
0.8
0.6
- 40 °C
25°C
125 °
C
0.4
BESAT
0.2
V - BASE-EMITTER VOLTAG E (V)
1 10 100 1000
I - COLLECTOR CURRENT ( mA)
C
Collector-Cutoff Cur rent
vs Ambien t Temperature
100
V = 40V
CB
10
1
0.1
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.001 0.01 0.1 1
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25°C
125 °
C
I - COLLECTOR CURRENT (A)
C
V = 5V
CE
Collector-Bas e Cap ac ita n ce
vs Collector-Base Vol tage
40
30
20
10
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AM BIEN T TE MP E RATU R E ( C)
A
°
Gain Bandwidth Product
vs Collector Current
500
V = 10V
CE
400
300
200
100
0
FE
1 10 100 1000
h - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLE CTO R CUR REN T (mA)
C
0
0 4 8 1216202428
OBO
V - COLL ECTOR -BASE VOLTAGE (V )
- COLLECTOR-B A SE CAPAC ITANCE (pF)
CB
Safe Operating Area TO-226 / SOT- 223
10
10
µ
1
*PULSED
0.1
OPERATION
T = 25 °C
A
C
I - COLLECTOR CURRENT (A)
0.01
110100
DC T = 25 °C
COLLEC TO R LEAD
DC T = 25 °C
AMBIENT
LIMIT DETERMINED
BY BV
V - COLLECTOR-EMITTER VOLTAG E (V)
CE
100
CEO
S*
µ
S*
1.0 ms*
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
1
TN6715A / NZT6715
NPN General Purpose Amplifier
(continued)
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TO-226
SOT-223
TEMPERATURE ( C)
o
3
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