Fairchild TN6714A, NZT6714 service manual
TN6714A / NZT6714
TN6714A
C
B
E
TO-226
NZT6714
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 2.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
TN6714A *NZT6714
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Devi ce Dissipat ion
Derate above 25°C
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125 125
1.0
8.0
1.0
8.0
2
.
W
mW/°C
C/W
°
C/W
°
µ
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 030V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
Collector-Cutoff Current VCB = 40 V, IE = 0 0.1
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 0.1
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
C
I
= 1.0 A, VCE = 1.0 V
Collector-Emitter Saturation Voltag e IC = 1.0 A, IB = 100 mA 0.5 V
)
C
40 V
5.0 V
A
A
55
60
50 250
Base-Emitter On Vol t age IC = 1.0 A, VCE = 1.0 V 1.2 V
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
2.5 25
f = 20 MHz
Collector-Base Capacitance VCB = 10 mA, IE = 0, f = 1.0 MHz 30 pF
TN6714A / NZT6714
T ypical Characteristics
Typical Pulsed Curr e nt Gain
vs Collector Current
500
V = 5V
CE
125 °C
25 °C
- 40 °C
0
0.001 0.01 0.1 1
I - CO LLEC TOR CU RR ENT (A)
C
h - TYPI CAL PULSED CURR ENT GA IN
400
300
200
100
FE
Collector-Emi tt er Satu ration
V o lt age vs C o llec tor Cur rent
1
= 10
β
0.1
125 °C
0.01
0.01 0.1 1
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
25 °C
- 4 0 °C
3
Typical Characteristics (continued)
TN6714A / NZT6714
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturati o n
V o lta ge vs Co llecto r Cu r rent
β
1.4
= 10
1.2
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
BESAT
0.2
V - BASE -EMI TTER VOLTAGE (V)
0.01 0.1 1
I - COLLE C TOR CURREN T (A)
C
Co lle ctor- Cuto f f Current
vs Ambien t Tem perature
100
V = 20V
CB
10
1
0.1
Base- Emitter ON Vo ltag e vs
Collector Current
1
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 4 0 °C
25 °C
125 °C
V = 5V
CE
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
Collector-Base Capacitance
vs Collector-Base Vol tage
40
30
20
10
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIEN T TEMPERATU RE ( C )
A
°
Gain Bandwidth Product
vs Collector Current
500
V = 10V
CE
400
300
200
100
0
1 10 100 1000
FE
h - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
0
0 4 8 1216202428
OBO
V - COLL ECTOR -BASE VOLTAGE (V )
- COLLECTOR- BASE CAPACITANC E (p F )
CB
Safe Operating Area TO-226 / SOT-223
10
10
µ
1
*PULSED
0.1
OPERATION
T = 25 °C
A
C
I - COLLECTOR CURRENT (A)
0.01
110100
DC T = 25 °C
COLLEC TO R LEAD
DC T = 25 °C
AMBIENT
LIMIT DETERMINED
BY BV
V - COLLECTOR-EMITT ER VOLTAG E (V)
CE
100
CEO
S*
µ
S*
1.0 ms*
Typical Characteristics (continued)
Power Dissipation vs
Ambient T em perature
1
TN6714A / NZT6714
NPN General Purpose Amplifier
(continued)
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TO-226
SOT-223
TEMPERATURE ( C)
o
3
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