TN4033A
TN4033A
C
B
E
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.0 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
TN4033A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
1.0
8.0
Ther mal Resista nce, Junction to C ase 125
Thermal Resistance , Junctio n to Ambien t 50
W
mW/°C
C/W
°
C/W
°
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
)
V
sat
BE(
)
V
BE(on)
Collector-Emitt er Sustai ning Voltage* IC = 10 mA, IB = 080V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
= 10 µA, IC = 0
I
E
Collector-Cutoff Current VCB = 60 V, IE = 0
V
= 60 V, IE = 0, TA = 150°C
CB
80 V
5.0 V
50
50
nA
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 10
DC Current Gain
I
= 100 µA, VCE = 5.0 V
C
I
=100mA, VCE=5.0V,TA = -55°C
C
I
= 100 mA, VCE = 5.0 V
C
= 500 mA, VCE = 5.0 V
I
C
I
= 1.0 A, VCE = 5.0 V
C
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
I
= 500 mA, IB = 50 mA
C
75
40
100
70
25
300
0.15
0.5
V
V
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.9 V
Base-Emitter On Voltage IC = 500 mA, VCE = 0.5 V 1.1 V
TN4033A
A
A
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
f = 100 MHz
SWITCHING CHARACTERISTICS
t
s
t
on
t
f
Storage Time IC = 500 mA, IB1 = IB2 = 50 mA 350 ns
Turn-On Time IC = 500 mA, IB1 = 50 mA 100 ns
Fall Time IC = 500 mA, IB1 = IB2 = 50 mA 50 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
1.0 4.0
T ypical Characteristics
TN4033A
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
300
250
200
125 °C
150
25 °C
100
50
- 40 °C
0
FE
0.1 0.3 1 3 10 30 100 300 1000
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Bas e-Emitter Sat u ra ti o n
Voltage vs Collector Current
1.2
β
= 10
1
- 40 °C
0.8
25 °C
0.6
0.4
BESAT
V - BASE-EMITTER VOLTAG E (V)
10 100 100 0
I - COLLECTOR CURRENT (mA)
C
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
= 10
β
0.6
0.4
0.2
10 100 1000
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
- 4 0 °C
25 °C
Base-Emitter ON V oltage vs
Collector Current
1
V = 5V
CE
0.8
- 4 0 °C
0.6
0.4
0.2
BE(ON)
0.1 1 10 50
V - BASE-EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
125 °C
Collector-Cutoff Current
vs Amb ient Tem perature
100
V = 50V
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
Collec to r- Ba se and Emit te r- Base
Capacitance vs Reverse Bias Voltage
500
200
100
50
20
CAPACITANCE (p F )
10
6
0.1 1 10 50
REVERSE BIAS VOL TAGE (V)
f = 1.0 MHz
C
ibo
C
obo