Fairchild TN2907A service manual
TN2907A
PNP General Purpose Amplifier
• This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
• Sourced from process 63.
1
TO-226
1. Collector 2. Base 3. Emitter
TN2907A — PNP General Purpose Amplifier
September 2007
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
TJ, T
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a m aximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TN2907A Rev. 1.0.0 1
TN2907A — PNP General Purpose Amplifier
Electrical Characteristics* T
=25×C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
CEX
On Characteristics
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
CE
V
(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
BE
Small Signal Characteristics
Cobo Output Capacitance
Cibo Input Capacitance
* Pulse Test: Pulse Width £ 300ms, Duty Cycle = 2%
NOTES:
1) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
Emitter-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 5 V
Collector Cut-off Current V
Collector Cut-off Current V
DC Current Gain IC = 0.1 mA, VCE = 10 V
= 50 V, IE = 0
CB
V
= 50 V, IE = 0, TA = 150C
CB
= 30 V, VBE = 0.5 V 50 nA
CE
10
10
75
I
C = 1.0 mA, VCE = 10 V
I
C = 10 mA, VCE = 10 V
I
C = 150 mA, VCE = 10 V*
I
C = 500 mA, VCE = 10 V*
100
100
100
50
300
0.4
I
C = 500 mA, IB = 50 mA*
1.6
1.3
I
C = 500 mA, IB = 50 mA
VCB = 10 V, IE = 0, f = 100 kHz
VEB = 2.0 V, IC = 0, f = 100 kHz
2.6
8.0 pF
30 pF
nA
μA
V
V
V
V
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TN2907A Rev. 1.0.0 2
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