Fairchild TIP140T, TIP142T service manual

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Monolithic Construction With Built In Base­Emitter Shunt Resistors

• High DC Current Gain : h

• Industrial Use

• Complement to TIP145T/146T/147T

NPN Epitaxial Silicon Darlington Transistor

= 1000 @ V

FE

TIP140T/141T/142T

= 4V, IC = 5A (Min.)

CE

1

TO-220

1.Base 2.Collector 3.Emitter

TIP140T/141T/142T

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage : TIP140T

Collector-Emitter Voltage : TIP140T

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Emitter-Base Voltage 5 V
Collector Current (DC) 10 A
Collector Current (Pulse) 15 A
Base Current (DC) 0.5 A
Collector Dissipation (TC=25°C) 80 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C

Electrical Characteristics

TC=25°C unless otherwise noted

60
: TIP141T
: TIP142T

80

100

60
: TIP141T
: TIP142T

80

100

TC=25°C unless otherwise noted

Equivalent Circuit

C

V
V
V

B

V
V
V

R

18

R

20.12

R1

k

R2

Ω≅

Ω≅

k

E

Symbol Parameter Test Condition Min. Typ. Max. Units

V

(sus) Collector-Emitter Sustaining Voltage

CEO

: TIP140T
: TIP141T
: TIP142T

ICEO

Collector Cut-off Current

: TIP140T
: TIP141T
: TIP142T

I

CBO

Collector Cut-off Current

: TIP140T
: TIP141T
: TIP142T

IEBO
hFE

V

(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA

CE

V

(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V

BE

(on) Base-Emitter On Voltage V

V

BE

t

D

t

R

t

STG

t

F

©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002

Emitter Cut-off Current V
DC Current Gain V

Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs

= 30mA, IB = 0 60

I

C

80

100

= 30V, IB = 0

V

CE

= 40V, IB = 0

V

CE

V

= 50V, IB = 0

CE

= 60V, IE = 0

V

CB

= 80V, IE = 0

V

CB

V

= 100V, IE = 0

CB

= 5V, IC = 0 2 mA

BE

= 4V, IC = 5A

CE

=4V, IC = 10A

V

CE

I

= 10A, IB = 40mA

C

= 4V, IC = 10A 3 V

CE

= 30V, IC = 5A

CC

= 20mA

I

B1

= -20mA

I

B2

R

= 6Ω

L

1000

500

0.15 µs

V
V
V

2

mA

2

mA

2

mA

1

mA

1

mA

1

mA

mA

2
3

V
V

Typical Characteristics

TIP140T/141T/142T

= 1200uA

I

B

= 1000uA

I

B

IB = 800uA

IB = 600uA

IB = 400uA

IB = 200uA

100k

10k

1k

, DC CURRENT GAIN

FE

100

h

10

0.1 1 10 100

IC[A], COLLECTOR CURRENT

10

IB = 2000uA

9

IB = 1800uA

8

IB = 1600uA
IB = 1400uA

7

6

5

4

3

[A], COLLECTOR CURRENT

C

2

I

1

0

012345

VCE[V], COLLECTOR-EMITTER VOLTAG E

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

VBE(sat)

VCE(sat)

IC=500I

B

0.1

(sat)[V], SATURATION VOLTAGE

CE

[pF], CAPACITAN CE
C

1000

100

ob

VCE = 4V

f=0.1MHz

(sat), V

BE

V

0.01

0.1 1 10 100

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

10

1 10 100 1000

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

Base-Emitter Saturation Voltage

DC

TIP140T
TIP141T

TIP142T

100

10

1

[A], COLLECTOR CU RRENT

C

I

0.1
1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

100

80

60

40

[W], POWER DISSIPATION

20

C

P

0

0 255075100125150175

TC[oC], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002