
查询TIP140T供应商
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : h
• Industrial Use
• Complement to TIP145T/146T/147T
NPN Epitaxial Silicon Darlington Transistor
= 1000 @ V
FE
TIP140T/141T/142T
= 4V, IC = 5A (Min.)
CE
1
TO-220
1.Base 2.Collector 3.Emitter
TIP140T/141T/142T
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP140T
Collector-Emitter Voltage : TIP140T
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage 5 V
Collector Current (DC) 10 A
Collector Current (Pulse) 15 A
Base Current (DC) 0.5 A
Collector Dissipation (TC=25°C) 80 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
60
: TIP141T
: TIP142T
80
100
60
: TIP141T
: TIP142T
80
100
TC=25°C unless otherwise noted
Equivalent Circuit
C
V
V
V
B
V
V
V
R
18
R
20.12
R1
k
R2
Ω≅
Ω≅
k
E
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP140T
: TIP141T
: TIP142T
ICEO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
I
CBO
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
IEBO
hFE
V
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
CE
V
(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
BE
(on) Base-Emitter On Voltage V
V
BE
t
D
t
R
t
STG
t
F
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Emitter Cut-off Current V
DC Current Gain V
Delay Time V
Rise Time 0.55 µs
Storage Time 2.5 µs
Fall Time 2.5 µs
= 30mA, IB = 0 60
I
C
80
100
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 60V, IE = 0
V
CB
= 80V, IE = 0
V
CB
V
= 100V, IE = 0
CB
= 5V, IC = 0 2 mA
BE
= 4V, IC = 5A
CE
=4V, IC = 10A
V
CE
I
= 10A, IB = 40mA
C
= 4V, IC = 10A 3 V
CE
= 30V, IC = 5A
CC
= 20mA
I
B1
= -20mA
I
B2
R
= 6Ω
L
1000
500
0.15 µs
V
V
V
2
mA
2
mA
2
mA
1
mA
1
mA
1
mA
mA
2
3
V
V

Typical Characteristics
TIP140T/141T/142T
= 1200uA
I
B
= 1000uA
I
B
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
100k
10k
1k
, DC CURRENT GAIN
FE
100
h
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
10
IB = 2000uA
9
IB = 1800uA
8
IB = 1600uA
IB = 1400uA
7
6
5
4
3
[A], COLLECTOR CURRENT
C
2
I
1
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAG E
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
VBE(sat)
VCE(sat)
IC=500I
B
0.1
(sat)[V], SATURATION VOLTAGE
CE
[pF], CAPACITAN CE
C
1000
100
ob
VCE = 4V
f=0.1MHz
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
Base-Emitter Saturation Voltage
DC
TIP140T
TIP141T
TIP142T
100
10
1
[A], COLLECTOR CU RRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
80
60
40
[W], POWER DISSIPATION
20
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002

Package Dimensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
TIP140T/141T/142T
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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