Fairchild TIP115, TIP116, TIP117 service manual
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Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112
PNP Epitaxial Silicon Darlington Transistor
TIP115/116/117
1
TO-220
1.Base 2.Collector 3.Emitter
TIP115/116/117
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP115
Collector-Emitter Voltage : TIP115
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
Collector Current (Pulse) -4 A
Base Current (DC) - 50 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
C
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
: TIP116
: TIP117
: TIP116
: TIP117
=25°C) 50 W
TC=25°C unless otherwise noted
- 60
- 80
- 100
- 60
- 80
- 100
V
V
V
B
V
V
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP115
: TIP116
: TIP117
ICEO
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
I
CBO
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = -2A, IB = -8mA -2.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
C
ob
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
I
= -30mA, IB = 0 -60
C
-80
-100
V
= -30V, IB = 0
CE
= -40V, IB = 0
V
CE
= -50V, IB = 0
V
CE
V
= -60V, IE = 0
CB
= -80V, IE = 0
V
CB
= -100V, IE = 0
V
CB
= -5V, IC = 0 -2 mA
BE
= -4V,IC = -1A
CE
V
= -4V, IC = -2A
CE
= -4V, IC = -2A -2.8 V
CE
= -10V, IE = 0, f = 0.1MHz 200 pF
CB
1000
500
-2
-2
-2
-1
-1
-1
C
E
V
V
V
mA
mA
mA
mA
mA
mA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP115/116/117
-5
IB = -1000 uA
IB = -900 uA
-4
IB = -800 uA
IB = -700 uA
IB = -600 uA
-3
IB = -500 uA
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITT E R VOL TA G E
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
= -400 uA
I
B
IB = -300 uA
IB = -200 uA
IB = -100 uA
IC = 500 I
10k
VCE = -4V
1k
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
-0.01 -0.1 -1 - 10 -100
f = 0.1 MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
TIP 115
TIP 116
TIP 117
Figure 4. Collector Output Capacitance
80
70
1 ms
5 ms
DC
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
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