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Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112
PNP Epitaxial Silicon Darlington Transistor
TIP115/116/117
1
TO-220
1.Base 2.Collector 3.Emitter
TIP115/116/117
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP115
Collector-Emitter Voltage : TIP115
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
Collector Current (Pulse) -4 A
Base Current (DC) - 50 mA
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (T
C
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
: TIP116
: TIP117
: TIP116
: TIP117
=25°C) 50 W
TC=25°C unless otherwise noted
- 60
- 80
- 100
- 60
- 80
- 100
V
V
V
B
V
V
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: TIP115
: TIP116
: TIP117
ICEO
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
I
CBO
Collector Cut-off Current
: TIP115
: TIP116
: TIP117
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC = -2A, IB = -8mA -2.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
C
ob
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
I
= -30mA, IB = 0 -60
C
-80
-100
V
= -30V, IB = 0
CE
= -40V, IB = 0
V
CE
= -50V, IB = 0
V
CE
V
= -60V, IE = 0
CB
= -80V, IE = 0
V
CB
= -100V, IE = 0
V
CB
= -5V, IC = 0 -2 mA
BE
= -4V,IC = -1A
CE
V
= -4V, IC = -2A
CE
= -4V, IC = -2A -2.8 V
CE
= -10V, IE = 0, f = 0.1MHz 200 pF
CB
1000
500
-2
-2
-2
-1
-1
-1
C
E
V
V
V
mA
mA
mA
mA
mA
mA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
TIP115/116/117
-5
IB = -1000 uA
IB = -900 uA
-4
IB = -800 uA
IB = -700 uA
IB = -600 uA
-3
IB = -500 uA
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITT E R VOL TA G E
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
= -400 uA
I
B
IB = -300 uA
IB = -200 uA
IB = -100 uA
IC = 500 I
10k
VCE = -4V
1k
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
-0.01 -0.1 -1 - 10 -100
f = 0.1 MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
TIP 115
TIP 116
TIP 117
Figure 4. Collector Output Capacitance
80
70
1 ms
5 ms
DC
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
18.95MAX.
15.90
4.50
1.30
±0.20
+0.10
–0.05
TIP115/116/117
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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A
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2
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®
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®
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Quiet Series™
SLIENT SWITCHER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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