Fairchild TIL111M, TIL117M service manual
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
September 2009
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
■
UL recognized (File # E90700)
VDE recognized (File #102497 for white package)
■
– Add option V (e.g., TIL111VM)
General Description
The MOC8100M, TIL111M and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
Applications
■
Power supply regulators
Digital logic inputs
■
■
Microprocessor inputs
Appliance sensor systems
■
■
Industrial controls
Schematic Package Outlines
ANODE 1
CATHODE 2
6 BASE
5 COLLECTOR
NC 3
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
4 EMITTER
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
EMITTER
V
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) All 3 A
I
F
P
DETECTOR
V
CEO
V
CBO
V
ECO
V
EBO
P
Storage Temperature All -40 to +150 °C
Operating Temperature All -40 to +100 °C
Lead Solder Temperature All 260 for 10 sec °C
Total Device Power Dissipation @ T
D
Derate above 25°C
I
DC/Average Forward Input Current All 60 mA
F
Reverse Input Voltage TIL111M 3 V
R
= 25°C
A
All 250 mW
2.94 mW/°C
MOC8100M, TIL117M 6
LED Power Dissipation @ T
D
Derate above 25°C
= 25 °C
A
All 120 mW
1.41 mW/°C
Collector-Emitter Voltage All 30 V
Collector-Base Voltage All 70 V
Emitter-Collector Voltage TIL111M, TIL117M 7 V
Emitter-Base Voltage All 7
Detector Power Dissipation @ T
D
Derate above 25°C
= 25 °C
A
All 150 mW
1.76 mW/°C
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 2
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
Input Forward Voltage I
F
Reverse Leakage Current V
I
R
DETECTOR
BV
Collector-Emitter
CEO
Breakdown Voltage
CBO
Collector-Base
BV
Breakdown Voltage
BV
Emitter-Base Breakdown
EBO
Voltage
BV
Emitter-Collector
ECO
Breakdown Voltage
I
CEO
Collector-Emitter Dark
Current
I
CBO
I
CBO
C
Collector-Base Dark
Current
Capacitance V
CE
*All Typical values at T
= 25°C
A
= 16mA T
F
= 10mA for
I
F
MOC8100M,
= 16mA; for
I
F
TIL117M
= 3.0V TIL111M, TIL117M 0.001 10 µA
R
= 6.0V MOC8100M 0.001 10 µA
V
R
I
= 1.0mA, I
C
I
= 10µA, I
C
I
= 10µA, I
E
I
= 100µA, I
F
V
CE
V
CE
V
CE
= 10V, I
= 5V, T
= 30V, I
F
F
F
A
F
= 25°C TIL111M 1.2 1.4 V
A
= 0°C–70°C MOC8100M,
T
A
= -55°C 1.32
T
A
= +100°C 1.10
T
A
= 0 All 30 100 V
F
TIL117M
1.2 1.4
= 0 All 70 120 V
= 0 All 7 10 V
= 0 TIL111M, TIL117M 7 10 V
F
= 0 TIL111M, TIL117M 1 50 nA
= 25°C MOC8100M 0.5 25 nA
= 0, T
= 70°C TIL117M,
A
0.2 50 µA
MOC8100M
V
= 10V TIL111M, TIL117M 20 nA
CB
V
= 5V MOC8100M 10 nA
CB
= 0V, f = 1MHz All 8 pF
CE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 3
Ω
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
Transfer Characteristics
(Continued) (T
= 25°C unless otherwise specified.)
A
Symbol Parameter Test Conditions Device Min Typ* Max Unit
DC CHARACTERISTICS
CTR
I
C(ON)
V
CE (SAT)
AC CHARACTERISTICS
T
T
OFF
Current Transfer Ratio,
CE
Collector to Emitter
On-State Collector Current
I
= 10mA, V
F
= 1mA, V
I
F
I
= 1mA, V
F
T
= 0°C to +70°C
A
I
= 16mA, V
F
= 10V TIL117M 50 %
CE
= 5V MOC8100M 50 %
CE
= 5V,
CE
= 0.4V TIL111M 2 mA
CE
30
(Phototransistor Operation)
On-State Collector Current
I
= 16mA, V
F
= 0.4V 7 µA
CB
(Photodiode Operation)
Collector-Emitter Saturation
Voltage
Tu r n-On Time I
ON
I
= 500µA, I
C
= 2mA, I
I
C
I
= 100µA, I
C
= 2mA, V
C
R
= 100 Ω (Fig. 11)
L
= 16mA TIL111M 0.4
F
CC
= 10mA TIL117M 0.4 V
F
= 1mA MOC8100M 0.5
F
= 10V,
MOC8100M 20 µs
TIL117M 10
Tu r n-Off Time MOC8100M 20 µs
TIL117M 10
Rise Time MOC8100M
t
r
t
Fall Time 2
f
Rise Time
t
r
(Phototransistor Operation)
t
Fall Time
f
I
= 2mA, V
C(ON)
R
= 100 Ω (Fig. 11)
L
= 10V,
CC
TIL117M
TIL111M 10 µs
2µs
(Phototransistor Operation)
Isolation Characteristics
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
R
ISO
C
ISO
*All Typical values at T
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 4
Input-Output Isolation Voltage
Isolation Resistance V
Isolation Capacitance
= 25°C
A
f = 60Hz, t = 1 sec. 7500 V
= 500 VDC 10
I-O
V
= 0, f = 1MHz 0.2 pF
I-O
11
AC(rms)
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