Datasheet TIL111M, TIL117M Datasheet (Fairchild)

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

September 2009

TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers

Features

■

UL recognized (File # E90700) VDE recognized (File #102497 for white package)

■

– Add option V (e.g., TIL111VM)

General Description

The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

Applications

■

Power supply regulators Digital logic inputs

■

Microprocessor inputs Appliance sensor systems

■

Industrial controls

Schematic Package Outlines

ANODE 1

CATHODE 2

6 BASE

5 COLLECTOR

NC 3

4 EMITTER

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

EMITTER

V

(pk) Forward Current – Peak (300µs, 2% Duty Cycle) All 3 A

I

F

P

DETECTOR

V

CEO

V

CBO

V

ECO

V

EBO

P

Storage Temperature All -40 to +150 °C Operating Temperature All -40 to +100 °C Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation @ T

D

Derate above 25°C

I

DC/Average Forward Input Current All 60 mA

F

Reverse Input Voltage TIL111M 3 V

R

= 25°C

A

All 250 mW

2.94 mW/°C

MOC8100M, TIL117M 6

LED Power Dissipation @ T

D

Derate above 25°C

= 25 °C

A

All 120 mW

1.41 mW/°C

Collector-Emitter Voltage All 30 V Collector-Base Voltage All 70 V Emitter-Collector Voltage TIL111M, TIL117M 7 V Emitter-Base Voltage All 7 Detector Power Dissipation @ T

D

Derate above 25°C

= 25 °C

A

All 150 mW

1.76 mW/°C

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

Input Forward Voltage I

F

Reverse Leakage Current V

I

R

DETECTOR

BV

Collector-Emitter

CEO

Breakdown Voltage

CBO

Collector-Base

BV

Breakdown Voltage

BV

Emitter-Base Breakdown

EBO

Voltage

BV

Emitter-Collector

ECO

Breakdown Voltage

I

CEO

Collector-Emitter Dark Current

I

CBO

I

CBO

C

Collector-Base Dark Current

Capacitance V

CE

*All Typical values at T

= 25°C

A

= 16mA T

F

= 10mA for

I

F

MOC8100M,

= 16mA; for

I

F

TIL117M

= 3.0V TIL111M, TIL117M 0.001 10 µA

R

= 6.0V MOC8100M 0.001 10 µA

V

R

I

= 1.0mA, I

C

I

= 10µA, I

C

I

= 10µA, I

E

I

= 100µA, I

F

V

CE

V

CE

V

CE

= 10V, I = 5V, T = 30V, I

F

A

F

= 25°C TIL111M 1.2 1.4 V

A

= 0°C–70°C MOC8100M,

T

A

= -55°C 1.32

T

A

= +100°C 1.10

T

A

= 0 All 30 100 V

F

TIL117M

1.2 1.4

= 0 All 70 120 V

= 0 All 7 10 V

= 0 TIL111M, TIL117M 7 10 V

F

= 0 TIL111M, TIL117M 1 50 nA

= 25°C MOC8100M 0.5 25 nA

= 0, T

= 70°C TIL117M,

A

0.2 50 µA

MOC8100M

V

= 10V TIL111M, TIL117M 20 nA

CB

V

= 5V MOC8100M 10 nA

CB

= 0V, f = 1MHz All 8 pF

CE

Ω

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Electrical Characteristics

Transfer Characteristics

(Continued) (T

= 25°C unless otherwise specified.)

A

Symbol Parameter Test Conditions Device Min Typ* Max Unit

DC CHARACTERISTICS

CTR

I

C(ON)

V

CE (SAT)

AC CHARACTERISTICS

T

OFF

Current Transfer Ratio,

CE

Collector to Emitter

On-State Collector Current

I

= 10mA, V

F

= 1mA, V

I

F

I

= 1mA, V

F

T

= 0°C to +70°C

A

I

= 16mA, V

F

= 10V TIL117M 50 %

CE

= 5V MOC8100M 50 %

CE

= 5V,

CE

= 0.4V TIL111M 2 mA

CE

30

(Phototransistor Operation) On-State Collector Current

I

= 16mA, V

F

= 0.4V 7 µA

CB

(Photodiode Operation) Collector-Emitter Saturation

Voltage

Tu r n-On Time I

ON

I

= 500µA, I

C

= 2mA, I

I

C

I

= 100µA, I

C

= 2mA, V

C

R

= 100 Ω (Fig. 11)

L

= 16mA TIL111M 0.4

F

CC

= 10mA TIL117M 0.4 V

F

= 1mA MOC8100M 0.5

F

= 10V,

MOC8100M 20 µs

TIL117M 10

Tu r n-Off Time MOC8100M 20 µs

TIL117M 10

Rise Time MOC8100M

t

r

t

Fall Time 2

f

Rise Time

t

r

(Phototransistor Operation)

t

Fall Time

f

I

= 2mA, V

C(ON)

R

= 100 Ω (Fig. 11)

L

= 10V,

CC

TIL117M TIL111M 10 µs

2µs

(Phototransistor Operation)

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ.* Max. Units

V

ISO

R

ISO

C

ISO

*All Typical values at T

Input-Output Isolation Voltage

Isolation Resistance V

Isolation Capacitance

= 25°C

A

f = 60Hz, t = 1 sec. 7500 V

= 500 VDC 10

I-O

V

= 0, f = 1MHz 0.2 pF

I-O

11

AC(rms)

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b,

V

x 1.875 = VPR, 100% Production Test

IORM

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

V

x 1.5 = VPR, Type and Sample Test

IORM

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

IORM

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

Typical Performance Characteristics

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

– FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0 110100

T

= -55°C

A

TA = 25°C

T

= 100°C

A

IF – LED FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4 Normalized to: I

= 10mA

F

T

= 25˚C

A

0.2

-60 -40 -20 0 20 40 60 80 100

TA – AMBIENT TEMPERATURE (˚C)

IF = 5mA

I

= 10mA

F

I

= 20mA

F

Fig. 2 Normalized CTR vs. Forward Current

1.6 VCE = 5.0V T

= 25˚C

A

1.4

1.2

1.0

0.8

0.6

0.4

NORMALIZED CTR

0.2

0.0

02468101214161820

IF – FORWARD CURRENT (mA)

)

1.0

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

Fig. 4 CTR vs. RBE (Unsaturated)

= 20mA

I

F

I

= 10mA

F

R

– BASE RESISTANCE (kΩ)

BE

I

F

V

= 5mA

= 5.0V

CE

Normalized to

= 10mA

I

F

)

1.0

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

Fig. 5 CTR vs. RBE (Saturated)

IF = 20mA

I

= 10mA

F

I

= 5mA

F

V

= 0.3V

CE

RBE – BASE RESISTANCE (kΩ)

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

100

= 25

˚C

T

A

10

1

IF = 2.5mA

0.1

0.01

– COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.001

CE (SAT)

V

IF = 5mA

0.01 0.1 1 10

IF = 10mA

IC - COLLECTOR CURRENT (mA)

IF = 20mA

Typical Performance Characteristics (Continued)

Fig. 7 Switching Speed vs. Load Resistor

1000

IF = 10mA V

= 10V

CC

T

= 25˚C

A

100

T

10

SWITCHING SPEED (µs)

1

0.1

0.1 1 10 100

off

T

on

T

r

f

R – LOAD RESISTOR (kΩ)

)

on(open)

/ t

)

BE

on(R

– (t

on

NORMALIZED t

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5 10 100 1000 10000 100000

Fig. 8 Normalized ton vs. R

BE

V

CC =

I

= 2mA

C

R

= 100Ω

L

10V

RBE – BASE RESISTANCE (kΩ)

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

1.4

Fig. 9 Normalized t

)

1.3

1.2

off(open)

1.1

/ t

)

1.0

BE

0.9

off(R

0.8

– (t

0.7

off

0.6

0.5

0.4

0.3

NORMALIZED t

0.2

0.1 10 100 1000 10000 100000

off

vs. R

BE

V

CC =

I

C

R

L

= 2mA

= 100Ω

RBE – BASE RESISTANCE (kΩ)

TEST CIRCUIT WAVEFORMS

V

= 10V

CC

I

C

R

L

OUTPUT

INPUT

I

F

R

BE

Adjust

Figure 11. Switching Time Test Circuit and Waveforms

10V

I

F to produce IC = 2mA

Fig. 10 Dark Current vs. Ambient Temperature

VCE = 10V

= 25°

C

T

A

1000

100

ARK CURRENT (nA)

10

1

OR -EMITTER D

0.1

0.01

– COLLECT

CEO

I

0.001 020406080100

10%

90%

TA – AMBIENT TEMPERATURE

INPUT PULSE

OUTPUT PULSE

t

r

t

on

t

f

t

off

(°C)

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

7.62 (Typ.)

15° (Typ.)

Surface Mount

64

8.13–8.89

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Option

No option TIL111M Standard Through Hole Device

S TIL111SM Surface Mount Lead Bend

SR2 TIL111SR2M Surface Mount; Tape and Reel

T TIL111TM 0.4" Lead Spacing

V TIL111VM VDE 0884

TV TIL111TVM VDE 0884, 0.4" Lead Spacing

SV TIL111SVM VDE 0884, Surface Mount

SR2V TIL111SR2VM VDE 0884, Surface Mount, Tape and Reel

Marking Information

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

Order Entry Identiﬁer

(Example) Description

1

TIL111

V X YY

43

Q

5

2

6

Deﬁnitions

1Fairchild logo

2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4 One digit year code, e.g., ‘7’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.

Carrier Tape Specification

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

Reflow Profile

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

1.75 ± 0.10

24.0 ± 0.3

°C

300

280

260°C

260

240

220

200

180

160

Time above

183°C = 90 Sec

140

120

100

1.822°C/Sec Ramp up rate

80

60

40

20

33 Sec

0

0 60 180120 270

Time (s)

>245°C = 42 Sec

360

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Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™

CROSSVOLT™

CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

®

™*

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST

®

F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

FastvCore™ FETBench™ FlashWriter FPS™

®

*

PDP SPM™ Power-SPM™

PowerTrench

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

®

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

ThePower Franchise

TinyBoost™ TinyBuck™

®

TinyLogic

®

TINYOPTO™

™

TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

®

TRUECURRENT™* µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICHCOVERS THESE PRODUCTS.

TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

Datasheet TIL111M, TIL117M Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

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