Fairchild ST5771-1 service manual
ST5771-1
ST5771-1
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100mA. Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 15 V
Collector-Base Voltage 15 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
ST5771-1
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
PNP Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CES
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0 15 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 15 V
Em i t ter - Bas e B r e akdown Vol tage
= 100 µA, IC = 0
I
E
4.5 V
Collector-Emitter Breakdown Voltage IC = 100 µA15V
Colle c tor Cu tof f Cu r ren t VCB = 8.0 V, IE = 0 10 nA
Colle c tor Cu tof f Cu r ren t VCE = 8.0 V, IE = 0
VCE = 8.0 V, IE = 0, TA = 125 0C
Emitter Cutoff Current VEB = 4.5 V, IC = 0 1.0
DC Cu r ren t Gain IC = 10 mA, VCE = 0.3 V
= 10 mA, VCE = 0.3 V,
I
C
= - 55 °C
T
A
= 1.0 mA, VCE = 0.5 V
I
C
= 50 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
C
= 10 mA, IB = 1.0 mA
I
C
IC = 50 mA, IB = 5.0 mA
Base- Emi tt er Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
30
15
30
20
0.8
10
5.0
150
0.15
0.18
0.6
0.8
0.95
1.5
nA
µ
µ
A
A
V
V
V
V
V
V
ST5771-1
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
fe
Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 3.0 pF
Em i t ter - Bas e C apaci t an ce VEB = 0.5 V, f = 1.0 MHz 3.5 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
s
t
on
t
d
t
r
t
off
t
s
t
f
St or age Tim e VCC = 3.0 V
Turn-on Time VCC = 1.5 V, IC = 10 mA, 15 ns
De lay Time IB1 = 1.0 mA 10 ns
Rise Time 15 ns
Turn-off Time VCC = 1.5 V, IC = 10 mA 20 ns
St or age Tim e IB1 = IB2 = 1.0 mA 20 ns
Fall Time 10 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
= IB1 = IB2 = 1.0 mA
I
C
7.0
20 ns
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