Fairchild SSH22N50A service manual

$GYDQF HG 3RZH U 026)(7

SSH22N50A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

: 0.197Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 500V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(3)

BV
R

DSS

DS(on)

= 500 V

ID = 22 A

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

500

22

13.4
88

30

±

2151

22

27.8

3.5

278

2.22

- 55 to +150

300

= 0.25Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

θJC

R

CS

θ

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

0.45

--

40

°C/W

Rev. B

SSH22N50A

1&+$1 1(/

32:(5 026)(7

Electrical Characteristics

CharacteristicSymbol

BV
∆BV/∆T
V

I

I

R

C
C
t

t

DSS

GS(th)

GSS

DSS

DS(on)

g

fs

C

iss
oss
rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

500

--

2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.69

--

--

--

--

--

--

17.31
3940

465
215

27
30

150

43

182

26

79.6

--

--

4.0

100

-100
10

100

0.25

--

5120

535
250

65
70

310

95

236

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=30V

V

GS

=-30V

V

GS

V

=500V

DS

V

=400V,TC=125°C

DS

=10V,ID=11A

V

GS

Ω

VDS=50V,ID=11A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=250V,ID=22A,
R

=5.3

G

VDS=400V,VGS=10V,

=22A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4)

(4) (5)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re
(2) L=8mH, I
(3) I

(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=22A, VDD=50V, RG=27Ω, Starting TJ =25°C

AS

22A, di/dt ≤ 300A/µs, V

≤

SD

DD

, Starting TJ =25°C

BV

≤

DSS

--

--

22

(1)

--

(4)

--

--

--

--

528

--

8.35

88

1.4

--

--

ns

µ

A
V

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=22A,VGS=0V

J

T

=25°C,IF=22A

J

di

/dt=100A/µs

F

(4)

µ

1&+$11(/

32:(5 026)(7

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V
1 0 V

8.0 V
7 .0 V

6.0 V
5 .5 V

1

5 .0 V

10

Bott om : 4.5 V

0

, Drain C urrent [A]

10

D

I

-1

10

VDS , Drain-S ource Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SSH22N50A

1

10

150 oC

0

10

25 oC

, Drai n Current [A]

D

I

- 55 oC

-1

1

10

10

246810

VGS , Gate -Source Voltag e [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 50 V

DS

s Pulse Test

µ

0.60

0.45

]

Ω

, [

DS(on)

R

0.30

0.15

VGS = 10 V

VGS = 20 V

Drain-Source On-Resis tance

@ Note : TJ = 25 oC

0.00
0153045607590

ID , Drain Current [A]

Capacitanc e [pF]

6000

4000

2000

C

iss

C

oss

C

rss

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

VDS , Drain-S ource Voltage [V]

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent

1

10

0

10

, Reverse Dra in Current [A]

DR

150 oC

I

25 oC

-1

10

0.40.60.81.01.21.41.61.82.02.2

@ Notes :

1. V

2. 250

= 0 V

GS

s Pulse Test

VSD , Source-Drai n Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage

10

5

, Gate -Source Voltag e [V]

GS

V

0

050100150200

VDS = 100 V

VDS = 250 V

VDS = 400 V

@ Notes : ID = 22.0 A

QG , Tota l Gate Charge [nC]