Fairchild SS9014 service manual
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High h
• Complementary to SS9015
and good linearity
FE
SS9014
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 450 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3
V
CE
(sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
C
ob
f
T
NF Noise Figure V
Collector-Base Breakdown Voltage IC =100µA, IE =0 50 V
Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V
Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=50V, IE =0 50 nA
CB
=5V, IC =0 50 nA
EB
=5V, IC =1mA 60 280 1000
CE
=5V, IC =2mA 0.58 0.63 0.7 V
CE
=10V, IE =0
CB
f=1MHz
=5V, IC =10mA 150 270 MHz
CE
=5V, IC =0.2mA
CE
f=1KHz, R
=2KΩ
S
2.2 3.5 pF
0.9 10 dB
h
Classification
FE
Classification A B C D
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
Typical Characteristics
SS9014
100
90
IB = 160µA
80
70
60
50
40
30
20
[mA], COLLECTOR CURRENT
C
I
10
0
0 1020304050
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
VCE [V], COLLECTOR-EMITTER VOLTAGE
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
(sat)[mV], SATURATION VOLTAGE
CE
1000
VBE (sat)
100
VCE (sat)
1000
100
VCE = 5V
VCE = 5V
(sat) , V
BE
V
10
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
IC = 20 I
B
10
1 10 100 1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC [mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A4, November 2002
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