SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High h
• Complementary to SS9015
and good linearity
FE
SS9014
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 450 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3
V
CE
(sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
C
ob
f
T
NF Noise Figure V
Collector-Base Breakdown Voltage IC =100µA, IE =0 50 V
Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V
Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=50V, IE =0 50 nA
CB
=5V, IC =0 50 nA
EB
=5V, IC =1mA 60 280 1000
CE
=5V, IC =2mA 0.58 0.63 0.7 V
CE
=10V, IE =0
CB
f=1MHz
=5V, IC =10mA 150 270 MHz
CE
=5V, IC =0.2mA
CE
f=1KHz, R
=2KΩ
S
2.2 3.5 pF
0.9 10 dB
h
Classification
FE
Classification A B C D
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
Typical Characteristics
SS9014
100
90
IB = 160µA
80
70
60
50
40
30
20
[mA], COLLECTOR CURRENT
C
I
10
0
0 1020304050
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
VCE [V], COLLECTOR-EMITTER VOLTAGE
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
(sat)[mV], SATURATION VOLTAGE
CE
1000
VBE (sat)
100
VCE (sat)
1000
100
VCE = 5V
VCE = 5V
(sat) , V
BE
V
10
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
IC = 20 I
B
10
1 10 100 1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC [mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A4, November 2002
Package Dimensions
4.58
0.46
±0.10
+0.25
–0.15
SS9014
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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