Fairchild SS8050 service manual
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
• Collector Power Dissipation: P
=1.5A
C
=2W (TC=25°C)
C
July 2010
1
1. Emitter 2. Base 3. Collector
TO-92
SS8050 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
Electrical Characteristics T
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 6 V
Collector Current 1.5 A
Collector Power Dissipation 1 W
C
Junction Temperature 150 °C
J
Storage Temperature -65 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Typ. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE (sat)
V
BE (sat)
V
BE (on)
C
f
CBO
CEO
EBO
ob
T
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Collector Cut-off Current VCB=35V, IE=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
DC Current Gain
V
=1V, IC=5mA
CE
=1V, IC=100mA
V
CE
=1V, IC=800mA
V
CE
45
85
40
300
Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 V
Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V
Base-Emitter On Voltage VCE=1V, IC=10mA 1 V
Output Capacitance VCB=10V, IE=0, f=1MHz 9.0 pF
Current Gain Bandwidth Product VCE=10V, IC=50mA 100 MHz
hFE Classification
Classification B C D
h
FE2
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 1
85 ~ 160 120 ~ 200 160 ~ 300
Typical Performance Characteristics
SS8050 — NPN Epitaxial Silicon Transistor
0.5
0.4
0.3
0.2
0.1
[A], COLLECTOR CURRENT
C
I
0 0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
VBE(sat)
1000
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
IC = 10 I
1000
VCE = 1V
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 1 0 100 100 0
IC[mA], COLLECTOR CURRENT
100
B
10
VCE = 1V
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
0.1 1 10 100 1000
VCE(sat)
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
110100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
100
[MHz],
T
f
10
CURRENT GAIN BANDWIDTH PRODUCT
1
1 10 100 400
IC[mA], COLLECTOR CURRENT
VCE = 10V
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 2
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