Fairchild Si9926DY service manual

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Si9926DY

Dual N-Channel 2.5V Specified PowerTrench



MOSFET

Si9926DY

January 2001

General Description

These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).

Applications

• Battery protection

• Load switch

• Power management

Features

• 6.5 A, 20 V. R

• Optimized for use in battery protection circuits

• ±10 V

• Low gate charge

allows for wide operating voltage range

GSS

= 0.030 Ω @ VGS = 4.5 V

DS(ON)

= 0.043 Ω @ VGS = 2.5 V.

R

DS(ON)

D1

D1

D2

D2

G1

S2

S1

G2

SO-8

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

5

Q1

6
7

Q2

8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 6.5 A

– Pulsed 20
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150

±10

1

0.9

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

9926 Si9926DY 13’’ 12mm 2500 uni t s

2001 Fairchild Semiconductor International

°C/W
°C/W

Si9926DY Rev A (W)

Si9926DY

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

20 V

14

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 4.5 V, ID = 6.5 A

= 2.5 V, ID = 5.4 A

V

GS

= 4.5 V, ID =6.5A, TJ=125°C

V

GS

0.5 1 1.5 V

-3

0.025

0.036

0.035

On–State Drain Current VGS = 4.5 V, VDS = 5 V 15 A
Forward Transconductance VDS = 5 V, ID = 3 A 11 S

mV/°C

0.030

0.043

0.050

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 700 pF
Output Capacitance 175 pF
Reverse Transfer Capacitance

= 10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

85 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 8 16 ns
Turn–On Rise Time 10 18 ns

= 10 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 18 29 ns
Turn–Off Fall Time
Total Gate Charge 7 10 nC
Gate–Source Charge 1.2 nC

V

= 10 V, ID = 3A,

DS

V

= 4.5 V

GS

Gate–Drain Charge

510ns

1.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A (Note 2) 0.65 1.2 V

Voltage

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

Ω

a) 78°/W when

mounted on a 0.5in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 125°/W when

mounted on a 0.02
in2 pad of 2 oz
copper

c) 135°/W when mounted on a

minimum pad.

Si9926DY Rev A (W)