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November 2001
Si6466DQ
20V N-Channel PowerTrench
MOSFET
Si6466DQ
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 12V).
Applications
• Battery protection
• DC/DC conversion
Features
• 7.8 A, 20 V R
R
• Extended V
GSS
• High performance trench technology for extremely
DS(ON)
low R
• Low profile TSSOP-8 package
= 15 mΩ @ VGS = 4.5 V
DS(ON)
= 22 mΩ @ VGS = 2.5 V
DS(ON)
range (±12V) for battery applications
• Power management
• Load switch
D
S
S
D
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage
GSS
± 12
ID Drain Current – Continuous (Note 1) 7.8 A
– Pulsed 30
PD Power Dissipation (Note 1a) 1.4 W
TJ, T
STG
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
1.1
V
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 87
(Note 1b)
114
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Sem iconductor Corporation
6466 Si6466DQ 13’’ 16mm 3000 units
°C/W
Si6466DQ Rev C(W )
Si6466DQ
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1
DSS
Breakdown Voltage Temperature
Coefficient
J
I
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
GSSF
I
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
GSSR
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
= 20 V, VGS = 0 V, TJ=55°C
V
DS
20 V
14
mV/°C
µA
25
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 4.5 V, ID = 7.8 A
= 2.5 V, ID = 6.3 A
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 7.8 A 33 S
0.6 1.0 1.5 V
–3.5
12
19
15
22
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1320 pF
iss
C
Output Capacitance 396 pF
oss
C
Reverse Transfer Capacitance
rss
= 10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
211 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 30 48 ns
d(off)
tf Turn–Off Fall Time
t
rr
Reverse Recovery Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge
= 10 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 0 V, IF = 1.5 A,
V
GS
dI
/dt = 100A/µs
F
= 10 V, ID = 7.8 A,
V
DS
V
= 4.5 V
GS
GEN
= 6 Ω
11 20 ns
23 80
ns
4.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.5 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
a) 87°C/W when
mounted on a 1in2 pad
of 2 oz copper.
VGS = 0 V, IS = 1.5 A (Note 2) 0.7 1.1 V
is determined by the user's board design.
b) 114°C/W when mounted
on a minimum pad of 2 oz
copper.
2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
c) Scale 1 : 1 on letter size
paper
Si6466DQ Rev C(W )