Fairchild Si6426DQ service manual

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October 2001

Si6426DQ

20V N-Channel PowerTrench



MOSFET

Si6426DQ

General Description

This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 8V).

Applications

• Battery protection

• DC/DC conversion

Features

• 5.4 A, 20 V R

R

• Extended V

GSS

• High performance trench technology for extremely

DS(ON)

low R

• Low profile TSSOP-8 package

= 35 mΩ @ VGS = 4.5 V

DS(ON)

= 40 mΩ @ VGS = 2.5 V

DS(ON)

range (±8V) for battery applications

• Power management

• Load switch

D

S

S

D

S

S

D

TSSOP-8

Pin 1

Absolute Maximum Ratings T

G

o

=25

C unless otherwise noted

A

5

6

7

8

4

3

2

1

Symbol Parameter Ratings Units

V

Drain-Source Voltage 20 V

DSS

V

Gate-Source Voltage

GSS

± 8

ID Drain Current – Continuous (Note 1) 5.4 A

– Pulsed 30
PD Power Dissipation (Note 1a) 1.4 W

TJ, T

STG

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

1.1

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 87

(Note 1b)

114

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Sem iconductor Corporation

6426 Si6426DQ 13’’ 16mm 3000 units

°C/W

Si6426DQ Rev B(W )

Si6426DQ

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1

DSS

Breakdown Voltage Temperature
Coefficient

J

I

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

GSSF

I

Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA

GSSR

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

= 20 V, VGS = 0 V, TJ=55°C

V

DS

20 V

14

mV/°C

µA

5

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 4.5 V, VDS = 5 V 20 A

D(on)

V

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 4.5 V, ID = 5.4 A

= 2.5 V, ID = 4.9 A

V

GS

= 2.5 V, VDS = 5 V 8

GS

gFS Forward Transconductance VDS = 10 V, ID = 5.4 A 11 S

0.6 0.9 1.5 V

–3

23
33

35
40

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 710 pF

iss

C

Output Capacitance 173 pF

oss

C

Reverse Transfer Capacitance

rss

= 10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

84 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 7 14 ns

d(on)

tr Turn–On Rise Time 17 31 ns

t

Turn–Off Delay Time 16 29 ns

d(off)

tf Turn–Off Fall Time

t

rr

Reverse Recovery Time

Qg Total Gate Charge 7 10 nC

Qgs Gate–Source Charge 1.5 nC

Qgd Gate–Drain Charge

= 6 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

= 0 V, IF = 1.5 A,

V

GS

dI

/dt = 100A/µs

F

= 6 V, ID = 5.4 A,

V

DS

V

= 4.5 V

GS

GEN

= 6 Ω

3 6 ns

14 100 ns

1.2 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 1.25 A

VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Drain–Source Diode Forward
Voltage

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = 1.25 A (Note 2) 0.7 1.2 V

is determined by the user's board design.

a) 87°C/W when

2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

mounted on a 1in2 pad
of 2 oz copper.

b) 114°C/W when mounted

on a minimum pad of 2 oz
copper.

c) Scale 1 : 1 on letter size

paper

Si6426DQ Rev B(W )