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SB29003
High Voltage Transistor
1
SOT-223
Marking: 5463003
1.Base 2.Collector 3.Emitter
SB29003 High Voltage Transistor
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 6 V
Collector Current 300 mA
Collector Dissipation (TC = 25°C) 2 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
BV
CBO
BV
CER
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Collector-Base Breakdown Voltage IC = 100µA, IB = 0 500 V
Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 400 V
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6 V
Collector Cut-off Current VCB = 400V, IE = 0 0.1 µA
Collector Cut-off Current VCE = 400V, IB = 0 0.5 µA
Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA
DC Current Gain * VCE = 10V, IC = 1mA
= 10V, IC = 10mA
V
CE
V
= 10V, IC = 50mA
CE
= 10V, IC = 100mA
V
CE
Collector-Emitter Saturation Voltage * IC = 1mA, IB = 0.1mA
= 10mA, IB = 1mA
I
C
= 50mA, IB = 5mA
I
C
40
50
45
40
200
0.4
0.5
0.75
Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA 0.75 V
Output Capatitance VCB = 20V, IE = 0, f = 1MHz 7 pF
V
V
V
©2004 Fairchild Semiconductor Corporation
SB29003 Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics
SB29003 High Voltage Transistor
Figure 1. DC Current Gain Figure 2. Capacitance
160
140
120
100
80
60
40
20
, DC CURRENT GAIN
FE
h
0
-20
-40
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 3. On Voltage Figure 4. Collector Saturation Region
1.0
Ta=25oC
0.8
0.6
0.4
[V], VOLTA GE
VBE(sat) @IC/IB=10
VBE(on) @VCE=10V
VCE=10V
1000
100
C
ib
[pF], CAPACITANCE
ob
[pF],C
ib
C
C
ob
10
1
0.1 1 10 100 1000
Ta=25oC
f=1MHz
VCB[V], COLL ECTOR-BA S E VOLTAGE
0.5
IC=10mAIC=1mA
0.4
0.3
0.2
IC=50mA
Ta=25oc
0.2
0.0
VCE(sat)@IC/IB=10
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 5. High Frequency Current Gain
100
10
1
, SMALL SIGNAL CURRENT GAIN
FE
h
0.1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURREN T
VCE=10V
f=10MHz
Ta=25oC
0.1
[V] COLLE CTOR EMITTE R VOLTAGE
CE
V
0.0
10 100 1000 10000 100000
IC[mA], COLLECTOR CURRENT
SB29003 Rev. A
2
www.fairchildsemi.com