Fairchild S1A, S1M service manual
S1A - S1M
Features
•
Low profile package.
• Glass passivated junction.
General Purpose Rectifiers
S1A-S1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
RRM
I
Average Rectified Forward Current,
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
Storage Temperature Range -55 to +150
TJ Operating Junction Temperature -55 to +150
= 100°C
@ T
A
8.3 ms Single Half-Sine-Wave
Parameter
= 25°C unless otherwise noted
A
1A 1B 1D 1G 1J 1K 1M
Value
Units
1.0 A
40 A
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 1.4 W
R
JA
θ
Thermal Resistance, Junction to Ambient* 85
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Symbol
VF Forward Voltage @ 1.0 A 1.1 V
trr Reverse Recovery Time
= 0.5 A, IR = 1.0 A, I
I
IR
CT Total Capacitance
F
Reverse Current @ rated V
= 4.0 V, f = 1.0 MHz
V
R
Parameter
Parameter
= 0.25 A
rr
R TA
= 25°C unless otherwise noted
A
1A 1B 1D 1G 1J 1K 1M
= 25°C
T
= 125°C
A
Value
Device
Units
C/W
°
Units
1.8
1.0
50
s
µ
A
µ
A
µ
12 pF
2001 Fairchild Semiconductor Corporation S1A-S1M, Rev. C1. Aug 2006
T ypical Characteristics
S1A-S1M
General Purpose Rectifiers
(continued)
2
[A]
F
1
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
Lead Temperature [ºC]
SINGLE PHASE
HAL F WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MO UNTE D
ON 0.315x0.315"
(8.0x8.0mm)
COPPER PAD AREAS
Figure 1. Forward Current Derating Curve
30
100
10
[A]
F
1
0.1
Forward Current, I
0.01
0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
100
[A]
FSM
25
20
8.3ms Single Half Sine-Wave
JEDEC Method
15
10
5
0
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
10
º
T = 125 C
J
1
[uA]
R
0.1
º
T = 75 C
J
º
T = 25 C
J
0.01
Reverse Current, I
0.001
0 20406080100120140
Reverse Voltage, VR[V]
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
100
50
[pF]
T
10
T = 25 C
º
J
f = 1.0 MHz
Vsig = 50mV p-p
5
100
Units Mounted On
20"x 20"(5.4mm )+0.5mil
50
inches(0.013mm)
Thick Copper Land Areas
10
5
2
Total Capacitance, C
1
0.01 0.1 1 10 100
Reverse Voltage, VR [V]
Transient Thermal Impedance [ºC/W]
1
0.01 0.1 1 10 100
Pulse Duration [s]
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
2001 Fairchild Semiconductor Corporation S1A-S1M, Rev. C1. Aug 2006
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