Features
• Low profile package.
• Glass passivated junction.
S1A - S1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
0.181 (4.597)
0.062 (1.575)
0.055 (1.397)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
1
0.114 (2.896)
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
S1A-S1M
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
= 100°C
@ T
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 85
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 1.0 A 1.1 V
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitanc e
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
1.0 A
40 A
1.4
11
W
mW/°C
°
C/W
°
C
°
C
1.0
50
1.8
12 pF
µA
µA
µS
1998 Fairchild Semiconductor Corporation
S1A-S1M, Rev. A
T ypical Characteristics
S1A-S1M
General Purpose Rectifiers
(continued)
Forward Current De ratin g Curve
2
1
FORWAR D CURRE NT (A )
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE ( C)
SINGLE PHASE
HALF WAV E
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MO UNTED
ON 0.315 x0.31 5"
(8.0x8.0mm)
COPPER PAD AREAS
º
Non-Repetitive Surge Current
30
25
20
15
10
5
FORWARD SURGE CURRENT (A)
0
12 51020 50100
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave
JEDEC Method
Forward Charact eristics
100
10
1
0.1
FORWAR D CU RRENT (A)
0.01
0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
Reverse Characteristics
100
10
µ
1
0.1
0.01
REVE RSE CUR R ENT ( A)
0.001
0 20406080100120140
º
T = 125 C
J
REVERSE VOLTAGE (V)
º
T = 75 C
J
º
T = 25 C
J
Junction Capacitance
100
50
10
5
CAPACITANC E (pF)
1
0.01 0.1 1 10 100
T = 25 C
º
J
f = 1.0 MHz
Vsig = 50mV p-p
REVERSE VOLTAGE (V)
The rm a l Im pe d a n ce
100
Units Mounted On
20"x 20"(5.4mm )+0.5mil
50
inches(0.013mm)
Thick Copper Land Areas
º
10
5
THERMAL IMPEDANCE ( C/W)
1
0.01 0.1 1 10 100
2
PULSE DURATION (SEC.)
S1A-S1M, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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