S1A - S1M
General Purpose Rectifiers
Features
• Low profile package.
• Glass passivated junction.
S1A - S1M — General Purpose Rectifiers
June 2010
SMA/DO-214AC
CO LOR B AND DENO TES CATHO DE
Absolute Maximum Ratings* T
Symbol Parameter
V
RRM
I
F(AV)
I
FSM
T
STG
T
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Average Rectified Forward Current
@ TA = 100°C
Non-Repetitive Peak Forward Surge Current
8 . 3m s S in g l e H a lf-Si n e -W a ve
Storage Temperature Range -55 to +150 °C
Operating Junction Temperature -55 to +150 °C
J
= 25°C unless otherwise noted
A
1A 1B 1D 1G 1J 1K 1M
Value
1.0 A
30 A
Units
Thermal Characteristics
Symbol Parameter Value Units
P
R
θJA
* Device mounted on FR-4 PCB 0.013 mm.
Power Dissipation 1.4 W
D
Thermal Resistance, Junction to Ambient* 85 °C/W
Electrical Characteristics T
Symbol Parameter
V
t
I
C
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
S1A - S1M Rev. C3 1
Forward Voltage @ 1.0A 1.1 V
F
Reverse Recovery Time
rr
I
Reverse Current @ rated VR TA=25°C
R
Total Capacitance
T
V
=0.5A, IR=1.0A, Irr=0.25A
F
= 4 . 0 V , f = 1 . 0 M H z
R
= 25°C unless otherwise noted
A
1A 1B 1D 1G 1J 1K 1M
T
=125°C
A
Value
1.8 µs
1.0
50
12 pF
Units
µA
µA
Typical Performance Characteristics
S1A - S1M — General Purpose Rectifiers
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
S1A - S1M Rev. C3 2
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Rev. I49
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