_
RURD620CCS9A_F085
Data Sheet August 2011
6A, 200V Ultrafast Dual Diodes
The RURD620CCS9A_F085 are ultrafast dual
diodes with soft reco
very characteristics (t
< 25ns). They
rr
have low forward voltage drop and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and ultrafast soft
recovery minimize ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Ordering Information
PART NUMBER PACKAGE
RURD620CCS9A_F085
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-252 variant in tape and reel, i.e.,
RURD620CCS9A.
TO-252AA
BRAND
UR620C
Symbol
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
• Qualified to AEC Q101
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-251AA
ANODE 1
CATHODE
ANODE 2
THODE
CA
(FLANGE)
C
K
A
1
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Square Wave, 20kHz
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 160
C
o
C
A
2
(Per Leg) T
o
= 25
C Unless Otherwise Specified
C
ANODE 2
ANODE 1
RRM
RW
F(A
FRM
FSM
STG
JEDEC TO-252AA
CA
(FLANGE)
RURD620CCS9A_F085
200 V
M
R
V)
D
L
AV
,T
J
200 V
200 V
6A
12 A
60 A
45 W
10 mJ
-65 to 175
THODE
UNITS
o
C
©2011 Fairchild Semiconductor Corporation
RURD620CCS9A_F085 Rev. C1
VR,
REVERSE VOLTAGE (V)
0 20050 150100
100
0.01
0.1
1
10
I
R
,
REVERSE CURRENT (µA)
0.001
25oC
100oC
175oC
µ
µ
θ
θ
RURD620CCS9A_F085
Electrical Specifications
(Per Leg) T
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
JC
I
= 6A - - 1.0 V
F
I
= 6A, T
F
V
= 200V - - 100
R
V
= 200V, T
R
I
= 1A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
V
= 10V, I
R
o
= 150
C
C - - 0.83 V
= 150
C
/dt = 200A/ µ s--25ns
F
/dt = 200A/ µ s--30ns
F
/dt = 200A/ µ s - 13 - ns
F
/dt = 200A/ µ s - 6.5 - ns
F
/dt = 200A/ µ s - 20 - nC
F
= 0A - 30 - pf
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
t
= Time from peak I
b
Q
= Reverse recovery charge.
RR
C
= Junction Capacitance.
J
R
= Thermal resistance junction to case.
JC
to projected zero crossing of I
RM
pw = Pulse width.
D = Duty cycle.
o
= 25
C, Unless Otherwise Specified
o
C - - 500
- - 3.5
+ t
.
a
b
based on a straight line from peak I
RM
through 25% of I
RM
RM
(See Figure 9).
o
C/W
A
A
Typical Performance Curves
30
10
FORWARD CURRENT (A)
,
F
I
1
0.5
0
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2011 Fairchild Semiconductor Corporation
175oC
0.25 0.5 0.75 1 1.25 1.5
100oC
FORWARD VOLTAGE (V)
VF,
25oC
RURD620CCS9A_F085 Rev. C1
5
1
0
155
160 170150 175165
2
3
4
T
C
, CASE
TEMPERATURE (
o
C)
I
F(AV)
, A
VERAGE FORWARD CURRENT (A)
6
DC
SQU
ARE WAVE
RURD620CCS9A_F085
Typical Performance Curves
20
t
rr
16
t
12
VERY TIMES (ns)
8
t, RECO
4
0
0.5 6
FIGURE 3. t
60
50
40
30
VERY TIMES (ns)
20
t, RECO
10
, t
AND t
rr
a
TC = 175oC, dIF/dt = 200A/µs
a
t
b
TC = 25oC, dIF/dt = 200A/µs
1
IF, FORWARD CURRENT (A)
CURVES vs FORWARD CURRENT FIGURE 4. t
b
t
rr
t
a
t
b
(Continued)
40
TC = 100oC, dIF/dt = 200A/µs
32
24
16
t, RECOVERY TIMES (ns)
8
0
0.5
, t
rr
a
t
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
AND t
CURVES vs FORWARD CURRENT
b
6
FIGURE 5. t
©2011 Fairchild Semiconductor Corporation
0
0.5 6
rr
, t
AND t
a
1
IF, FOR
WARD CURRENT (A)
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
b
50
40
30
ACITANCE (pF)
20
10
, JUNCTION CAP
J
C
0
0 50 100 150 200
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
VR, REVERSE
VOLTAGE (V)
RURD620CCS9A_F085 Rev. C1
Test Circuits and Waveforms
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
IV
t
0
t
1
t
2
I
L
V
AV
L
t
I
L
MPLITUDE AND
VGE A
RG CONTR
t
1 AND t2
V
GE
OL dI
CONTR
t
1
F
OL I
t
2
/dt
F
RG
L
DUT
IGBT
RURD620CCS9A_F085
CURRENT
SENSE
+
V
-
DD
I = 1A
L = 20mH
R < 0.1Ω
= 1/2LI2 [V
E
AV
L
= IGBT (BV
Q
1
FIGURE 8. t
R(A
VL)
> DUT
CES
/(V
R(A
V
Q
1
TEST CIRCUIT FIGURE 9. t
rr
V
-
)]
DD
VL)
)
R(A
VL)
CURRENT
SENSE
DUT
LR
+
-
V
DD
V
DD
WAVEFORMS AND DEFINITIONS
rr
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2011 Fairchild Semiconductor Corporation
RURD620CCS9A_F085 Rev. C1
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®
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tm
™
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®
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μSerDes™
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Ultra FRFET™
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*
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Rev. I55
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