Fairchild RUR1S1560S service manual
RUR1S1560S
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Data Sheet
15A, 600V Ultrafas t Diode
The RUR1 S1560S i s an u ltrafast diode (trr< 55ns) with soft
recove ry charac teristi cs. It has low forward vo lta ge d r op a nd
is of silicon nitride pass ivated ion-implanted, epitaxial planar
construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other pow er swit ching applic ations. Its low stored c harge
and ultrafast soft recovery minimizes ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistor.
Formerly developmental type TA9905.
Ordering Information
PART NUMBER PACKAGE BRAND
RUR1S1560S TO-2 63 RUR1560
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
Symbol
K
A
Absolute Maximum Ratings T
SYMBOL PARAMETER RUR1S1560S UNITS
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
, T
T
J
STG
T
L
T
pkg
THERMAL SPECI FICATIONS
R
θJC
R
θJA
NOTES:
CAUTION: Stresses above those listed in “Ab solute Maximum Ratings” m ay cause perm anent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current 15 A
Repetitive Peak Surge Current (20kHz Square Wave) 30 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
Power Dissipation 100 W
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Thermal Resistance Junction to Case 1.5
Thermal Resistance Junction to Ambient 60
= 25oC, Unless Otherwise Specified
C
Features
• Ultrafast Recovery. . . . . . . . . . . . . . . . . . . . . . . .trr < 55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Av ala nc he Energy Rated
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-263
CATHODE
ANODE
300
260
September 2002
CATHODE
(FLANGE)
o
C
o
C
o
C
o
C/W
o
C/W
o
C
RUR1S1560S Rev. A1©2002 Fairchild Semiconductor Corporation
RUR1S1560S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
IF = 15A - - 1.5 V
I
= 15A, TC = 150oC--1.2V
F
VR = 600V - - 100 µA
V
= 600V, TC = 150oC - - 500 µA
R
IF = 1A, dIF/dt = 100A/µs, VR = 30V - - 55 ns
I
= 15A, dIF/dt = 100A/µs, VR = 30V - - 60 ns
F
IF = 1A, dIF/dt = 100A/µs, VR = 30V - 20 - ns
I
= 15A, dIF/dt = 100A/µs, VR = 30V - 30 - ns
F
IF = 1A, dIF/dt = 100A/µs, VR = 30V - 15 - ns
I
= 15A, dIF/dt = 100A/µs, VR = 30V - 17 - ns
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
= Reverse recovery time (See Figure 9), summation of ta + tb.
t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
t
b
pw = pulse width.
D = duty cycle.
©2002 Fairchild Semiconductor Corporation RUR1S1560S Rev. A1
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