Fairchild RMPA2458 service manual

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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier

Preliminary

March 2005

RMPA2458

2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier

Features

31.5dB small signal gain

27dBm output power @ 1dB compression

103mA total current at 19dBm modulated power out

2.5% EVM at 19 dBm modulated power out

3.3V collector supply operation

2.9V mirror supply operation

Power saving shutdown options (bias control)

Integrated power detector with 20dB dynamic range

Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package

Internally matched to 50 Ohms and DC blocked RF input/
output

Optimized for use in 802.11b/g applications

General Description

The RMPA2458 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The on­chip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA’s
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.

Device

Electrical Characteristics

(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth

802.11g OFDM Modulation

Parameter Min Typ Max Units

Frequency 2.4 2.5 GHz

Collector Supply Voltage 3.0 3.3 3.6 V

Mirror Supply Voltage 2.9 V

Mirror Supply Current 3.3 mA

Gain 31.5 dB

Total Current @ 19dBm P

EVM @ 19dBm P

Detector Output @ 19dBm P

Detector Threshold

Notes:

1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, T

2. Percentage includes system noise floor of EVM = 0.8%.

measured at P

3. P

OUT

©2005 Fairchild Semiconductor Corporation

RMPA2458 Rev. C

IN

OUT

2

OUT

3

corresponding to power detection threshold.

OUT

340 mV

= 25°C, PA is constantly biased, 50 Ω system.

A

1

103 mA

2.5 %

5 dBm

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RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier

Electrical Characteristics

802.11b CCK Modulation

(RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth

Parameter Min Typ Max Units

Frequency 2.4 2.5 GHz

Collector Supply Voltage 3.0 3.3 3.6 V

Mirror Supply Voltage 2.9 V

Mirror Supply Current 3.3 mA

Gain 32 dB

Total Current @ 19dBm Pout 130 mA

First Side Lobe Power @ 19dBm Pout -36 dBm

Second Side Lobe Power @ 19dBm Pout -60 dBm

Max Pout Spectral Mask Compliance

2

24 dBm

Detector Output @ 19dBm Pout 1.15 V

Detector Pout Threshold

Electrical Characteristics

3

5 dBm

Single Tone

Parameter Min Typ Max Units

Frequency 2.4 2.5 GHz

Collector Supply Voltage 3.0 3.3 3.6 V

Mirror Supply Voltage (VM123) 2.6 2.9 3.1 V

Gain 31.5 dB

Total Quiescent Current 49 mA

Bias Current at pin VM123

P1dB Compression 27 dBm

Current @ P1dB Compression 600 mA

Shutdown Current (VM123 = 0V) <1.0 µA

Input Return Loss 12 dB

Output Return Loss 9dB

Detector Output at P1dB Compression 2.4 V

Detector Pout Threshold

Tu r n-on Time

5

Spurious (Stability)

4

3

3.2 mA

5V

<1.0 µS

6

-65 dBc

Notes:

1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9 Volts, Ta = 25°C, P

is adjusted to point where performance approaches spectral mask requirements.

2. P

IN

3. P

measured at P

OUT

4. Mirror bias current is included in the total quiescent current.

5. Measured from Device On signal turn on to the point where RF P

6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. P

corresponding to power detection threshold.

IN

RMPA2458 Rev. C

is constantly biased, 50 Ω system.

A

stabilizes to 0.5dB.

OUT

= -30dBm to P1dB.

OUT

2

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Absolute Ratings

Symbol Parameter Ratings Units

VC1, VC2, VC3 Positive Supply Voltage 5 V

IC1, IC2, IC3 Supply Current

IC1
IC2
IC3

VM123 Positive Bias Voltage 3.6 V

P

IN

T

CASE

T

STG

Note:

1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

RF Input Power +5 dBm

Case Operating Temperature -40 to +85 °C

Storage Temperature -55 to +150 °C

50
150
700

Functional Block Diagram

RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier

mA
mA
mA

VM123

VC2

GND

RF IN

GND

GND

VDET

GND

Pin Description

13141516

6

VC1

VOLTAGE

DETECTOR

7

GND

OUTPUT

MATCH

8

GND

1

2

3

INPUT

4

MATCH

5

GND

12

11

10

9

VC3

N/C

GND

RF OUT

1 VM123

2 VC2

3 GND

4 RF IN

5 GND

6 VC1

7 GND

8 GND

9 RF OUT

10 GND

11 N/C

12 VC3

13 GND

14 VDET

15 GND

16 GND

RMPA2458 Rev. C

3

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