Fairchild RHRP3060 service manual
RHRP3060
K
A
30A, 600V Hyperfast Diodes
RHRP3060 30A, 600V Hyperfast Diodes
April 2005
Features
• Hyperfast with Soft Recovery ........................<40ns
• Operating Temperature..................................175°C
• Reverse Voltage Up To ..................................600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Informations
Part Number Package Brand
RHRP3060 TO-220AC RHRP3060
Note: When opdering, use the entire part number.
Packaging Symbol
Description
The RHRP3060 are hypersast diodes with soft recovery characteristics (
diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49063.
< 40ns). They have half the recovery time of ultrafast
trr
CATHODE
ANODE
JEDEC TO-220AC
Absolute Maximum Ratings
Symbol Parameter RHRP3060 Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
, T
J
STG
©2005 Fairchild Semiconductor Corporation
RHRP3060 Rev. C
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current (TC = 120°C) 30 A
Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation 125 W
Avalanche Energy (See Figures 10 and 11) 20 mJ
Operating and Storage Temperature -65 to 175 °C
1
325 A
www.fairchildsemi.com
RHRP3060 30A, 600V Hyperfast Diodes
Electrical Characteristics
TC = 25°C unless otherwise noted
RHRP3060
Symbol Test Conditions
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%)
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figur e 9).
QRR = Reverse recovery charge.
CJ = Junctio n Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = Duty cycle.
IF = 30A - - 2.1 V
= 30A, TC = 150°C--1.7V
I
F
VR = 400V - - - µA
V
= 600V - - 250 µA
R
= 400V, TC = 150°C---mA
V
R
V
= 600V, TC = 150°C--1.0mA
R
IF = 1A, dlF/dt = 200A/µs--40ns
= 30A, dlF/dt = 200A/µs--45ns
I
F
IF = 30A, dlF/dt = 200A/µs-22-ns
IF = 30A, dlF/dt = 200A/µs-18-ns
IF = 30A, dlF/dt = 200A/µs - 100 - nC
VR = 600V, IF = 0A - 85 - pF
Min. Typ. Max.
--1.2°C/W
Units
RHRP3060 Rev. C
2
www.fairchildsemi.com
Loading...