Discrete POWER & Signal
Technologies
RGP10A - RGP10M
Features
• 1.0 ampere operation at T
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical I
less than 1µA.
R
• Fast switching for high efficiency.
1.0 Ampere Glass Passivated Fast Recovery Rectifiers
= 55°C
A
COLOR BAND DENOTES CATHODE
DO-41
1.0 min (25.4)
Dimens i o ns in
inches (mm)
0.205 (5.21)
0.160 (4.06)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
RGP10A-RGP10M
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
.375 " lead length @ T
= 55°C
L
Peak Forward Surge Current
8.3 ms single half-si ne-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, J unct i on to Ambient 50
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +175
1.0 A
30 A
2.5
17
mW/°C
°C/W
W
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
10A 10B 10D 10G 10J 10K 10M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 150°C
T
A
Maximum Reverse Recovery Time
= 0.5 A, IR = 1.0 A, I
I
F
= 0.25 A
rr
Maximum Forward Voltage @ 1.0 A 1.3 V
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
5.0
200
150 250 500 nS
15 pF
A
µ
A
µ
1999 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. A
T ypical Characteristics
RGP10A-RGP10M
Forward Current De ratin g Curve
1
0.75
SINGLE PHASE
0.5
HALF WAV E
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.25
.375" (9.0mm ) LEAD
FORWAR D CURRE NT (A )
LENGTH S
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( C)
º
Forward Characteristics
10
1
0.1
T = 25 C
FORWARD CU RRENT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6
FORWAR D VOLTA GE (V)
º
A
Pulse Widt h = 300µs
2% Duty Cycle
Non-Repetitive Surge Current
30
25
20
15
10
5
0
PEAK FORWARD SURGE CURRENT (A)
1 2 5 10 20 50 100
NUMBER O F CYCL ES AT 60Hz
Reverse Characteristics
10
T = 125 C
º
µ
1
0.1
REVERSE CURRENT ( A)
0.01
0 20406080100120140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
A
T = 75 C
º
A
º
T = 25 C
A
Junctio n Cap a cita nc e
100
50
20
10
5
CAPACITANCE (pF)
2
1
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
Ω
50
NONINDUCTIVE
DUT
1 2 5 10 20 50 100
OSCILLOSCOPE
(Note 1)
REVERSE VOLTAGE (V)
(-)
Pulse
Generator
(Note 2)
(+)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
Reverse Recovery Time Characterstic and Test Circuit Diagram
5/ 10 ns/ cm
RPG10A - RPG10M, Rev. A
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failure to perform when properly used in accordance
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2. A critical component is any component of a life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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