Fairchild RGP10A, RGP10B, RGP10D, RGP10G, RGP10J service manual
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RGP10A - RGP10M
Features
• 1.0 ampere operation at T
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical I
less than 1µA.
R
• Fast switching for high efficiency.
Fast Rectifiers (Glass Passivated)
= 55°C
A
COLOR BAND DENOTES CATHODE
DO-41
RGP10A-RGP10M
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
RRM
I
Average Rectified Forward Current,
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +175
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 55°C
L
= 25°C unless otherwise noted
A
10A 10B 10D 10G 10J 10K 10M
Value
Units
1.0 A
30 A
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 3.0 W
R
θ
Thermal Resistance, Junction to Ambient 50
JA
Electrical Characteristics T
Symbol
VF Forward Voltage @ 1.0 A 1.3 V
trr Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
IR
CT Total Capacitance
F
Reverse Current @ rated V
V
= 4.0 V, f = 1.0 MHz
R
Parameter
Parameter
= 0.25 A
rr
R TA
= 25°C unless otherwise noted
A
= 25°C
T
= 150°C
A
Value
Device
10A 10B 10D 10G 10J 10K 10M
150 250 500 ns
5.0
200
15 pF
Units
C/W
°
Units
µA
µ
A
RPG10A - RPG10M, Rev. C2001 Fairchild Semiconductor Corporation
T ypical Characteristics
RGP10A-RGP10M
[A]
F
1
30
[A]
FSM
25
0.75
20
SINGLE PHASE
0.5
HAL F WAV E
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.25
.375" (9.0mm ) LEAD
LENGTH S
0
25 50 75 100 125 150 175
Average Rectified Forward Current, I
Lead Temperature [ºC]
15
10
5
0
Peak Forward Surge Current, I
1 2 5 10 20 50 100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
10
[A]
F
1
0.1
Forward Current, I
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6
T = 25 C
º
A
Pulse Widt h = 300
2% Duty Cycle
µµµµ
s
Forward Voltage, VF [V]
10
T = 125 C
º
A
1
[mA]
R
T = 75 C
º
A
0.1
º
T = 25 C
Reverse Current, I
0.01
0 20406080100120140
A
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
100
50
[pF]
T
20
10
5
2
Total Capacitance, C
1
1 2 5 10 20 50 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
50
Ω
NONINDUCTIVE
50V
(approx)
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
Reverse Recovery Time Characterstic and Test Circuit Diagram
5/ 10 ns/ cm
2001 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
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