Features
•
Glass passivated junction.
• For surface mounted application.
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
Fast Rectifiers
RGF1A-RGF1M
RGF1A - RGF1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current,
F(AV)
I
Non-repetitive Peak Forward Surge
FSM
@ T
Current
L
Parameter
= 125°C
= 25°C unless otherwise noted
A
Value
1A 1B 1D 1G 1J 1K 1M
50 100 200 400 600 800 1000 V
1.0 A
30
8.3 ms Single Half-Sine-Wave
T
stg
Storage Temperature Range -65 to +175
TJ Operating Junc tion Temperat ure -65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 1.76 W
R
JA
θ
R
JL
θ
Thermal Resistance, Junction to Ambient* 85
Thermal Resistance, Junction to Lead* 28
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Symbol
VF Forward Voltage @ 1.0 A
trr Reverse Recovery Time
I
IR
Reverse Current @ rated V
CT Total Capacitance
V
2001 Fairchild Semiconductor Corporation
Parameter
= 0.5 A, IR = 1.0 A, I
F
TA = 25°C
T
A
= 4.0 V, f = 1.0 MHz
R
Parameter
= 125°C
= 25°C unless otherwise noted
A
1A 1B 1D 1G 1J 1K 1M
= 0.25 A
rr
R
Value
Device
150 250 500 ns
1.3 V
5.0
100
8.5 pF
RGF1A-RGF1M, Rev. G
Units
A
C
°
C
°
Units
C/W
°
C/W
°
Units
A
µ
A
µ
T ypical Characteristics
RGF1A-RGF1M
Fast Rectifiers
(continued)
1.25
[A]
F
1
0.75
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C . B . M O UN T E D
ON 0. 2 x 0. 2"
(5. 0 x 5.0 mm)
0.25
COPPER PAD AREAS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
Ambient Temperature [ºC]
50
[A]
FSM
40
30
20
10
0
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
20
10
[A]
F
T = 125 C
º
A
1
T = 25 C
º
A
0.1
Forward Current, I
Pulse Width = 300
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
2% Duty Cycle
µµµµ
s
Forward Voltage, VF [V]
30
10
º
T = 150 C
A
[mA]
R
1
º
T = 100 C
A
0.1
º
Reverse Current, I
0.01
0 20406080100120140
T = 25 C
A
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
2001 Fairchild Semiconductor Corporation
50
20
[pF]
T
10
5
2
Total Capacitance, C
1
12 51020 50100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
RGF1A-RGF1M, Rev. G