Fairchild RFP12N10L service manual

Data Sheet April 2005

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, aut om otive switch ing and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-of f po w er control directly from logic circuit
supply voltages.

Formerly developmental type TA09526.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP12N10L TO-220AB F12N10L

NOTE: When ordering, include the entire part number.

Features

• 12A, 100V

•r

DS(ON)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,
TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.200Ω

Components to PC Boards

Symbol

D

Packaging

DRAIN

(TAB)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

G

S

©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. B1

RFP12N10L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP12N10L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drai n C u rr e n t (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Above T

= 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC

C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

DS

DGR

D

DM

GS

D

J, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100 V
100 V

12 A
30 A

±10 V

60 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

= 25oC to 125oC.

1. T

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Thermal Resistance Junction to Case R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

DSSID

GS(TH)

DSS

GSS

DS(ON)

ISS

OSS

RSS

d(ON)

r

d(OFF)

f

JC

θ

= 250µA, VGS = 0V 100 - - V
VGS = VDS, ID = 250µA (Figure 7) 1 - 2 V
V

= 80V - - 1 µA

DS

V

= 0V TC = 125oC- - 50 µA

GS

VGS = 10V, V

= 0V - - 100 nA

DS

ID = 12A, VGS = 5V (Figures 5, 6) - - 0.200 Ω

VGS = 0V, VDS = 25V, f = 1MHz

- - 900 pF

(Figure 8)

- - 325 pF

- - 170 pF

ID = 6A, VDD = 50V, RG = 6.25Ω,

= 5V

V

GS

(Figures 9, 10, 11)

-1550ns

- 70 150 ns

- 100 130 ns

- 80 150 ns

TO-220 2.083 oC/W

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 50A/µs - 150 - ns

NOTES:

2. Pulsed: pulse duration = 80µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. B1