Fairchild RFG70N06, RF1S70N06, RFP70N06 service manual

RFG70N06, RFP70N06, RF1S70N06,

Data Sheet February 2005

RF1S70N06SM

70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs

These are N-Channel power MOSFETs manu factured using
the MegaFET process. This proces s, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching re gulators , s witch ing con v erters, motor driv ers and
relay driv ers. These tr ansistor s can be operated directly from
integrated circuits.

Formerly developmental type TA78440.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG70N06 TO-247 RFG70N06
RFP70N06 TO-220AB RFP70N06
RF1S70N06 TO-262AA F1S70N06
RF1S70N06SM TO-263AB F1S70N06

NOTE: When ordering use the entire part number . Add the suffix 9A to
obtain the T O-263AB variant in tape and reel, e. g. RF1 S70N0 6SM9A.

Features

• 70A, 60V

•r

• Temperature Compensated PSPICE

DS(on)

= 0.014Ω

®

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

o

•175

C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

SOURCE

DRAIN

DRAIN

GATE

GATE

GATE

SOURCE

DRAIN

(FLANGE)

JEDEC TO-263AB

JEDEC TO-262AA

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

©2005 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. D

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG70N06, RFP70N06

RF1S70N06, RF1S70N06SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V

GS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Cu rrent (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Single Pulse Avalanche R a ting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

DM

GS

AS

D

D

Refer to Pea k Current Curve

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

, T

J

STG

L

pkg

60 V
60 V
70

±20 V

Refer to UIS Curve A

150

1.0

W/oC

-55 to 175

300
260

A

W

o

C

o

C

o

C

NOTE:

= 25oC to 150oC.

1. T

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

(ON)

r

f

g(10)

g(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V (Figure 11) 60 - - V
VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 60V, VGS = 0V - - 1 µA
V

= 0.8 x Rated BV

DS

, TC = 150oC--25µA

DSS

VGS = ±20V - - ±100 nA ID = 70A, VGS = 10V (Figure 9) - - 0.014 Ω VDD = 30V, ID ≈ 70A, RL = 0.43Ω,

V

= 10V, RGS = 2.5Ω

GS

(Figure 13)

- - 190 ns

-10- ns

- 137 - ns

-32- ns

-24- ns

- - 73 ns

VGS = 0V to 20V VDD = 48V, ID = 70A,

R

= 0.68Ω

VGS = 0V to 10V - 65 85 nC
VGS = 0V to 2V - 5.0 6.5 nC

L

= 2.2mA

I

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 120 156 nC

- 2250 - pF

- 792 - pF

- 206 - pF

--1.0oC/W
TO-220 and TO-263 - - 62
TO-247 - - 30

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2005 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. D

ISD = 70A - 1.5 V
ISD = 70A, dISD/dt = 100A/µs - 52 ns

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Typical Performance Curves T

C

= 25

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED PO WER DISSIP ATION vs CASE

TEMPERATURE

1

0.5

o

C, Unless Otherwise Specified

, DRAIN CURRENT (A)

D

I

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

80

70

60

50

40

30

20

10

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

125

150

175

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

500

100

OPERATION IN THIS
AREA MAY BE

10

LIMITED BY r

, DRAIN CURRENT (A)

D

I

T

= 25oC

C

T

= MAX RATED

J

SINGLE PULSE

1

1

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

1000

100µs

1ms

10ms

100

, PEAK CURRENT (A)
I

DM

100

50

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

10

-4

10

P

DM

θ

10

TC = 25oC

FOR TEMPERAT URES
ABOVE 25
CURRENT AS FOLLOWS:

=

II

-3

10

t, PULSE WIDTH (s)

-2

10

t

1

t

2

1/t2

x R

JC

0

o

+ T

JC

C

θ

C DERATE PEAK

175 T

–




25



10

------------------ ----­150

-1

C

10

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

©2005 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. D