Fairchild RFD14N05, RFD14N05SM service manual
RFD14N05, RFD14N05SM
Data Sheet
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This proces s, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD14N05 TO-251AA F14N05
RFD14N05SM TO-252AA F14N05
NOTE: When ordering, use the ent ire part number . Add t he suffix 9A t o
obtain the TO -252AA variant in t he tape and reel , i.e., RF D14N05SM9A.
February 2004
Features
• 14A, 50V
•r
• Temperature Compensating PSPICE
DS(ON)
= 0.100Ω
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
•175
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
DRAIN (FLANGE)
S
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
©2004 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM Rev. C
RFD14N05, RFD14N05SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFD14N05, RFD14N05SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
DM
AS
J, TSTG
D
Refer to Peak Current Curve
D
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
50 V
50 V
±20 V
14
Refer to UIS Curve
48
0.32
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
= 25oC to 150oC.
1. T
J
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)VGS
g(TH)VGS
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V (Figure 9) 50 - - V
= VDS, ID = 250µA2-4V
VDS = Rated BV
V
= 0.8 x Rated BV
DS
, VGS = 0V - - 25 µA
DSS
, VGS = 0V, TC = 150oC - - 250 µA
DSS
VGS = ±20V - - ±100 nA
= 14A, VGS = 10V, (Figure 11) - - 0.100 Ω
VDD = 25V, ID ≈ 14A, VGS = 10V,
= 25Ω, RL = 1.7Ω
R
GS
(Figure 13)
- - 60 ns
-14- ns
-26- ns
-45- ns
-17- ns
- - 100 ns
= 0V to 20V VDD = 40V, ID = 14A,
R
= 2.86Ω
= 0V to 10V - - 25 nC
= 0V to 2V - - 1.5 nC
L
= 0.4mA
I
g(REF)
(Figure 13)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
- - 40 nC
- 570 - pF
- 185 - pF
-50- pF
- - 3.125oC/W
- - 100
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulse Te st: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2004 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM Rev. C
ISD = 14A - - 1.5 V
SD
ISD = 14A, dISD/dt = 100A/µs - - 125 ns
rr
RFD14N05, RFD14N05SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0
25 50 75 100
TC, CASE TEMPERATURE (oC)
125
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0.5
0.2
0.1
THERMAL IMPEDANCE
0.1
0.05
0.02
0.01
NORMALIZED
Z
JC,
θ
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
16
12
8
, DRAIN CURRENT (A)
4
D
I
1750
0
25 50 75 100
TC, CASE TEMPERATURE (oC)
125
150
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
1/t2
x R
JA
θ
0
10
+ T
JA
A
θ
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
, DRAIN CURRENT (A)
I
100
D
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1
DS(ON)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
SINGLE PULSE
= 25oC
T
C
100µs
1ms
10ms
DC
100ms
100
100
TRANSCONDUCTANCE
, PEAK CURRENT CAPABILITY (A)
MAY LIMIT CURRENT
IN THIS REGION
DM
I
10
-5
10
VGS = 20V
VGS = 10V
-4
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-3
10
t, PULSE WIDTH (s)
-2
10
o
C DERATE PEAK
175 T
II
---------------------
=
25
150
-1
10
–
C
0
10
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2004 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM Rev. C
1
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