Fairchild QTLP660CIR service manual

QTLP660CIR

1.8mm DOME LENS
EMITTING DIODE

QTLP660CIR

PACKAGE DIMENSIONS

0.134 (3.40)

Ø0.075 (1.9)
Ø0.067 (1.7)

0.091 (2.3)

0.083 (2.1)

R0.004 (0.1)

0.118 (3.00)

0.102 (2.6)

0.087 (2.2)

TOP

5°

0.024 (0.6)

0.016 (0.4)

0.028 (0.7)

0.020 (0.5)

SIDE

BOTTOM

7°

0.106 (2.7)

0.098 (2.5)

0.079 (2.0)

+ -

POLARITY

NOTE:
Dimensions for all drawings are in inches (mm).

FEATURES

• 1.8mm Dome Lens Package

• Available in 0.315” (8mm) width tape on 7” (178mm) diameter reel; 2,000 units per reel

• Narrow Emission Angle, 30°

• Wavelength = 940 nm, GaAs

• Water Clear Lens

• Matched Photosensor: QTLP660CPDF

© 2003 Fairchild Semiconductor Corporation

Page 1 of 7

3/5/03

λ

Θ

QTLP660CIR

1.8mm DOME LENS
EMITTING DIODE

QTLP660CIR

(T

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Rating Unit

= 25°C unless otherwise specified)

A

Operating Temperature T

Storage Temperature T

Soldering Temperature (Iron)

Soldering Temperature (Flow)

(1,2,3)

(1,2)

Continuous Forward Current I

Reverse Voltage V

Power Dissipation

(4)

Peak Forward Current (Pulse width = 100µs, Duty Cycle=1%) I

Notes:

1. RMA flux is recommended.

2. Methanol or isopropyl alcohols are recommended as cleaning agents.

3. Soldering iron tip at 1/16" (1.6mm) from housing

4. At 25°C or below

(T

ELECTRICAL / OPTICAL CHARACTERISTICS

=25°C)

A

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS

Peak Emission Wavelength I

Emission Angle I

Forward Voltage

Reverse Current V

Radiant Intensity

Rise Time I

Fall Time t

= 20 mA

F

= 20 mA

F

I

= 20 mA

F

= 100 mA, t

F

I

= 1 A, t

F

= 5 V I

R

I

= 20 mA

F

= 100 mA, t

F

I

= 1 A, t

F

= 100 mA, t

F

= 20 ms t

P

= 100 µs, Duty Cycle = 0.01 — 1.4 1.85

P

= 100 µs, Duty Cycle = 0.01 — 2.6 4.0

P

= 100 µs, Duty Cycle = 0.01 — 14 —

P

= 100 µs, Duty Cycle = 0.01 — 140 —

P

T

SOL-I

T

SOL-F

OPR

STG

-40 to +85 °C

-40 to +90 °C

240 for 5 sec °C

260 for 10 sec °C

65 mA

5V

130 mW

1.0 A

P

F

R

D

FD

P — 940 — nm

— ±15 — Deg.

— 1.2 1.5

V

F

R

——100 µA

1.0 3.0 —

Ee

r

f

— 1 — µs

— 1 — µs

VI

mW/srI

© 2003 Fairchild Semiconductor Corporation

Page 2 of 7

3/5/03

TYPICAL PERFORMANCE CURVES

QTLP660CIR

1.8mm DOME LENS
EMITTING DIODE

QTLP660CIR

Fig. 1 Forward Current vs.

Ambient Temperature

140

120

(mA)

100

F

80

60

40

20

Forward Current I

0

-25 0 20 40 60 80 100

Ambient Temperature (°C)

Fig. 3 Peak Emission Wavelength vs.

Ambient Temperature

980

960

940

Fig. 2 Relative Radiant Intensity vs.

Wavelength

100

80

60

40

20

Relative Radiant Intensity (%)

0

880 900 920 940 960 980 1000 1020 1040

Wavelengthl λ (nm)

IF = 20 mA

A = 25˚C

T

Fig. 4 Forward Current vs.

Forward Voltage

4

10

tp=100µs

3

Duty Cycle=0.01

(mA)

F

10

920

Peak Emission Wavelength (nm)

900

-25 0

Ambient Temperature TA (°C)

25 50 75 100

Fig. 5 Relative Intensity vs.

Ambient Temperature (°C)

5

3

1

Ie - Radiant Intensity (mW/sr)

0.1

25 50 75 100 120

© 2003 Fairchild Semiconductor Corporation

IF=20mA

Page 3 of 7

2

10

Forward Current I

1

10

01234

Forward Voltage (V)

Fig. 6 Relative Radiant Intensity vs.

Angular Displacement

0° 10°10° 20°20° 30°30°

1.0

0.9

0.8

0.7

Relative Radiant Intensity

0.6 0.4 0.2 0 0.2 0.4 0.6

40°

50°

60°

70°

80°

3/5/03